Nonequilibrium Quantum Electron Transport Properties of Functional Interfaces

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The origin of the long-standing contact issue in silicon carbide devices can be understood and technologically manipulated at atomic level. Using advanced transmission electron microscopy, we attributed qualitatively the formation of ohmic contacts to silicon carbide to an epitaxial, coherent, and atomically ordered interface. First principles calculations predict that this interface can trap an atomic layer of carbon and hence enable lowered Schottky barrier and enhanced quantum electron transport.An unprecedented insulator-to-metal transition has been discovered in A-site excess, nonstoichiometric oxides, La_<0. 5> Sr_<n+ 1-0. 5> TinO_<3n+ 1>, which is found to be driven by an insulating SrTiO_3 unit cell. The transition is accompanied by electron localization due to a complex interplay of electrons and phonons, and is unusual as the majority of electrons in the conducting phase are confined to within an atomic layer forming a two-dimensional electron gas.