Study of the applicability of fast ions from laser induced plasma to shallow junction doping

激光诱导等离子体快离子对浅结掺杂的适用性研究

• 批准号: 22656023
• 负责人: SEKIOKA Tsuguhisa
• 金额: $ 2.27万
• 依托单位: University of Hyogo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22656023/
• 关键词: 高性能レーザー; 放射線,X線,粒子線; 半導体物性; 放射線,Ｘ線,粒子線

The characteristics of fast ions generated from laser-induced plasma on a boron solid target have been studied for an application to shallow junction doping. The peak position in theproduced B ion energy spectra can be controlled in a 150-550 eV range by changing the laser intensity. From the measurement of B ion energy spectrum whichwas resolved into charge states at several laser intensities, most part of the energy spectra aroundthe peak position was found to be composed of B+ions at the laser intensity less than 3.0×1010W/cm2. The number of produced ions around the peak of the energy spectrum was about 2×1012ions/(eV・Sr) or higher within the emission angle smaller than 45° . These results indicate that the produced B+ions are applicable to shallow doping in a sub-10 nm range.

研究了激光诱导等离子体在硼固体靶上产生的快速离子的特性，并将其应用于浅结掺杂。通过改变激光强度，可以将生成的B离子能谱中的峰值位置控制在150 ~ 550 eV范围内。通过对不同激光强度下B离子能谱的测量，发现在激光强度小于3.0×1010W/cm2的情况下，峰值位置附近的能谱大部分由B+离子组成。在小于45°的发射角范围内，能谱峰附近产生的离子数约为2×1012ions/（eV·Sr）或更高。结果表明，制备的B+离子可用于亚10nm范围内的浅掺杂。

项目成果

Nuclear Instruments and Methods in Physics Research Section B

物理研究中的核仪器和方法 B 部分

• 期刊: Beam Interactions with Materials and Atoms
• 作者: Sekioka T;Amano S;Inoue T;and Mochizuki T
• 通讯作者: and Mochizuki T