Development of multi-phase bonding for wafer level processing of 3D system in package

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Recently, high performance copper joint is really needed to be used at high temperature with increasing demand in high density packaging technology. The bonding process must be carried out less than 300°C. In the present study, Cu and Sn were interlaminated at the faying surface, which produced multi-phases interlayer during the bonding process. The conclusive bond layer consisted of Cu3Sn which is high melting point intermetallic compound. Moreover, the voids could be reduced by addition of tiny bit of zinc.