Atomic layer resolved electronic structure analysis of compound semiconductor by photoelectron diffraction spectroscopy

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Photoelectron diffraction spectroscopy enables non-destructive local atomic and electronic structure analysis owing to the element-and site-selectivity of photoelectron and its angular distribution. We have developed a method to disentangle site-specific photoelectron pattern from different atomic site and studied graphene and its interface between SiC substrate by layer resolved photoelectron patterns. Also, we developed a method for the density of state analysis at each atomic site and applied to the InP and InSb(001) surfaces. Furthermore, we found negative contrast photoelectron diffraction replica in the secondary electron pattern and proposed their origin. Understanding of this phenomenon is essential for the quantitative analysis of photoelectron diffraction.