Magnetization switching under the assistance of rf field and its feasiility for high density recording

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In this study, magnetization switching behaviors of perpendicular magnetic nanodots under the rf field have been investigated and discussed the technological feasibility for the future ultra-high density magnetic recording. Even for the dot 10 times larger than the exchange length, it is reveled that the magnetization switching caused by the precessional motion of whole spins inside the dot is realized. The switching field which is the dc field required for the magnetization switching proportionally decreases with increasing the frequency of the rf field. This switching behavior is well understood by the frequency dispersion of the eignemode of precessional motion which strongly depends on the dot size. These results will provide the novel recording technology which possesses very good controllability.