Quantum-dot size, nanostructure and low work function Green devices fabricated by precise position control

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Extremely sharp and uniform nanostructure Transfer Mold FEAs (field emitter arrays) have been developed by using Transfer Mold emitter fabrication method and low work function and environment hard amorphous carbon thin film to realize highly efficient and reliable vacuum nanodevices such as power switching devices and field emission displays (FEDs).Transfer Mold FEAs have the base length, turn-on field and emission current fluctuations of as low as 41 nm,10.2Vpermicron and 1.61%,being compared with 100nm-a few micron,50-600 Vper micron and 5-100% of conventional FEAs. The base length of 41 nm and emission current fluctuations of 1.61% are the lowest values ever reported. Moreover,the emission fluctuations by in-situ radical treatment were as low as 4.5%, being compared with 5-100% for conventional FEAs with resistive layers with no oxidizing atmosphere.