Quantum-dot size, nanostructure and low work function Green devices fabricated by precise position control

非常尖锐和均匀的纳米结构传递模塑FEAs已经通过使用传递模塑发射器制造方法和低功函数和环境硬的非晶碳薄膜开发了场发射器阵列（Field Emitter Array），以实现高效和可靠的真空纳米器件，例如功率开关器件和场发射显示器（FED）。传递模塑FEAs具有基极长度，开启场和发射电流的波动分别为41 nm、10.2V/μ m和1.61%，而传统的100 nm-几μ m、50-600 V/μ m和5-100%的FEAs器件的开启场和发射电流波动分别为100 nm-几μ m和50 -600 V/μ m。基区长度为41 nm，发射电流波动为1.61%，是有史以来报道的最低值。此外，通过原位自由基处理的发射波动低至4.5%，相比之下，具有电阻层的常规FEAs在没有氧化气氛的情况下的发射波动为5-100%。

Extremely sharp and uniform nanostructure Transfer Mold FEAs (field emitter arrays) have been developed by using Transfer Mold emitter fabrication method and low work function and environment hard amorphous carbon thin film to realize highly efficient and reliable vacuum nanodevices such as power switching devices and field emission displays (FEDs).Transfer Mold FEAs have the base length, turn-on field and emission current fluctuations of as low as 41 nm,10.2Vpermicron and 1.61%,being compared with 100nm-a few micron,50-600 Vper micron and 5-100% of conventional FEAs. The base length of 41 nm and emission current fluctuations of 1.61% are the lowest values ever reported. Moreover,the emission fluctuations by in-situ radical treatment were as low as 4.5%, being compared with 5-100% for conventional FEAs with resistive layers with no oxidizing atmosphere.