Development of spin polarized metastable atom source and application of surface magnetic analysis

自旋极化亚稳原子源研制及表面磁分析应用

• 批准号: 23540387
• 负责人: AOKI Masaru
• 金额: $ 3.16万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23540387/
• 关键词: 準安定原子; 電子分光; 表面磁性; 準安定励起原子; スピン偏極

Electronic properties of potassium-doped dibenzopentacene thin films were studied by electron spectroscopy method using herium metastable atom as a probe. The spectra for KxDBP (0 < x < 3.5) films show three types of gap state in the HOMO-LUMO gap of pristine DBP. The threshold of electron emission for K1DBP is located ~0.1 eV below the Fermi level with no metallic feature, suggesting that K1DBP is a Mott-Hubbard insulator. At the formation of K2DBP, the film has a wide-gap insulator. Upon further deposition of K, the new gap state appears near Fermi level and is attributed to partial electron filling in the LUMO+1~LUMO+3 states, however, the leading edge of the gap state is located ~0.1 eV below Fermi level without a metallic feature. Therefore, the heavily doped species transfers to a Mott-Hubbard insulator again. The gap state plays a key role in superconductivity of K3.5DBP at low temperature.

以氦亚稳态原子为探针，用电子能谱方法研究了钾掺杂二苯并戊二烯薄膜的电子性质。KxDBP(0&lt；x&lt；3.5)薄膜的光谱显示了原始DBP的HOMO-LUMO带隙中的三种带隙状态。K1DBP的电子发射阈值位于费米能级以下约0.1 eV，没有金属特征，表明K1DBP是Mott-Hubbard绝缘体。在K2DBP形成时，薄膜具有宽间隙的绝缘体。进一步淀积K后，新的能带态出现在费米能级附近，并归因于LUMO+1~LUMO+3能级的部分电子填充，但带隙前沿位于费米能级以下约0.1 eV处，没有金属特征。因此，重掺杂物种再次转移到Mott-Hubbard绝缘体上。能带态对K3.5DBP的低温超导电性起着关键作用。

项目成果

セシウムドープされた有機薄膜におけるギャップ準位のキャラクタリゼーション

铯掺杂有机薄膜中能隙能级的表征

• 发表时间: 2012
• 作者: 青木優;増田茂;他
• 通讯作者: 他

Gap states in Cs-doped organic films on Au substrate: A combined spectroscopic and theoretical study

Au 基底上 Cs 掺杂有机薄膜的能隙态：光谱与理论相结合的研究

• 作者: 長谷川卓哉;木野亮;佐藤輔;青木謙人;伊藤龍亮;保坂朋宏;黒江晴彦;関根智幸;木原工;徳永将史;長谷正司;竹端寛治;北澤英明;岡邦彦;伊藤利充;永崎洋;松本正茂;H. Sato et al.
• 通讯作者: H. Sato et al.

Loal eletroni properties at organi-metal interfaes : Thiophene deri:ati:es on Pt(111)

有机金属界面的局部电子性质：Pt(111) 上的噻吩 deri:ati:es

• 发表时间: 2012
• 期刊: Phys.Chem.Chem.Phys
• 作者: H. Sato;S. Ushiyama;M. Sogo;M. Aoki;K. Shudo;T. Sugawara;S. Yanagisawa;Y. Morikawa;S. Masuda
• 通讯作者: S. Masuda

Au(111)基板上ジベンゾペンタセンの振動・電子構造

Au(111) 基底上二苯并五苯的振动和电子结构

• 发表时间: 2014
• 作者: Yuji Inagaki;Yasutaka Sakamoto;Hiroki Morodomi;Tatsuya Kawae;Yasuo Yoshida;Takayuki Asano;Kohei Hosoi;Hirokazu Kobayashi;Hiroshi Kitagawa;Yoshitami Ajiro;and Yuji Furukawa;鈴木 敦 等
• 通讯作者: 鈴木 敦 等

Fractal Growth of Au Thin Films: Observation by Photoemission Electron Microscope

Au 薄膜的分形生长：光电发射电子显微镜观察

• 发表时间: 2013
• 作者: 藤耕一郎;平出翔大;戎修二;M. Aoki et al.
• 通讯作者: M. Aoki et al.