Growth of p-, n-amorphous oxides and application to devices

p-、n-非晶氧化物的生长及其在器件中的应用

• 批准号: 23550205
• 负责人: KOBAYASHI Kenkichiro
• 金额: $ 3.33万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23550205/
• 关键词: 非晶質; ｐｎ制御; 非晶質InGaZnO4; p型; 非晶質酸化物; クラスタードーピング; ドーピング

We have prepared p-type InGaZnO4 (IGZO) films by radio frequency (RF) magnetron sputtering of targets of mixtures of ZnO and AlN powders. In the cases of sputtering of a target (7% AlN) at high pressure of 0.02 Torr, films prepared at 0.5 and 0.6% O2 atmospheres show positive Seebeck coefficients of 1.5 and 1.2 mV/K (p-type), respectively. As O2-concentration is raised up to 1%, films become insulators again. All of films prepared from targets containing 10% AlN or more are insulators irrespective of O2-concentration in atmospheres. For a p-type IGZO films, we evaluate the resistivity of 210 ohmcm, the hole-density of 7.5x1017 cm-3 and mobility of 0.4 cm2/Vs. The rectification characteristic is seen in a current vs. voltage curve of a device comprising of Au/p-type IGZO/n-type IGZO. A possible mechanism of the growth of p-type IGZO films is that Al-N clusters with lower kinetic energy are incorporated into the disordered IGZO lattice, without the dissociation of Al-N bonds.

采用射频磁控溅射法制备了p型InGaZnO 4（IGZO）薄膜。在溅射的情况下，在0.02托的高压下的目标（7%AlN），在0.5和0.6%O2气氛下制备的膜显示出积极的塞贝克系数分别为1.5和1.2 mV/K（p型）。当O2-浓度升高到1%时，薄膜又变成绝缘体。 所有的薄膜制备的目标含有10%的AlN或更多的绝缘体，而不管在大气中的O2-浓度。对于p型IGZO膜，我们评估了210 ohm cm的电阻率、7.5 × 1017 cm-3的空穴密度和0.4 cm 2/Vs的迁移率。在包括Au/p型IGZO/n型IGZO的器件的电流-电压曲线中看到整流特性。 生长p型IGZO薄膜的一个可能机制是具有较低动能的Al-N团簇被并入无序的IGZO晶格中，而Al-N键没有解离。

项目成果

Preparation of P-type ZnO Films by Alternate Deposition of Mg3N2

Mg3N2 交替沉积法制备 P 型 ZnO 薄膜

• 发表时间: 2011
• 作者: K. Kobayashi;T. Koyama;X. Zhang;Y. Kohno;Y. Tomita;Y. Maeda and S. Matsushima
• 通讯作者: Y. Maeda and S. Matsushima

Preparation of p-type ZnO Films by Alternate Deposition of ZnO and Mg3N2 Films

• DOI: 10.1016/j.proeng.2012.03.062
• 发表时间: 2012
• 期刊: Procedia Engineering
• 作者: Kenkichiro Kobayashi;T. Koyama;Xinyo Zhang;Yoshiumi Kohono;Y. Tomita;Y. Maeda;S. Matsushima

First-principles study on electronic structure of Sr2Bi2O5 crystal

• DOI: 10.1016/j.jpcs.2011.08.030
• 发表时间: 2011-12
• 期刊: Journal of Physics and Chemistry of Solids
• 影响因子: 4
• 作者: Y. Obukuro;Hiroyuki Nakamura;K. Obata;S. Matsushima;M. Arai;Kenkichiro Kobayashi

Preparation and Characterization of CaO-Bi_2O_3 Complex Oxide

CaO-Bi_2O_3复合氧化物的制备及表征

• 发表时间: 2011
• 作者: H.Nakamura;T.Uehara;Y.Obukuro;K.Obata;S.Matsushima;M.Arai;K.Kobayashi
• 通讯作者: K.Kobayashi

First-principles study on electronic structure and optical properties of Ca4Bi6O13 crystal

• DOI: 10.1016/j.jpcs.2012.07.012
• 发表时间: 2013
• 期刊: Journal of Physics and Chemistry of Solids
• 影响因子: 4
• 作者: Hiroyuki Nakamura;Y. Obukuro;K. Obata;S. Matsushima;M. Arai;Kenkichiro Kobayashi