Development of solid-state lasers fabricated with laminated p- and n-type organic semiconductor crystals, and analysis of their emission mechanism

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In the present studies, development of a new observation system and improvement of device structures have been carried out for a future realization of the organic semiconductor devices that indicate current-injected laser oscillations. The constructed system enables elaborated measurements of time variations of both currents flowing in the device and light emissions from that device under application of alternating current voltages having frequencies over 100 kHz.Organic light-emitting field-effect transistors were chosen for a target device. Bright light emissions or spectrally-narrowed emissions were achieved in the following devices: (i) Both p- and n-type organic materials were used for an emitting layer. (ii) Inorganic semiconductors were combined with organic crystals. (iii) Diffraction gratings were engraved on gate insulator layers. (iv) Dual gate electrodes were incorporated into the devices.