Development of Stark modulator using ZnO/ZnMgO quantum wells

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We have studied quantum confined Stark effect (QCSE) of ZnO/ZnMgO quantum wells. The optical modulator devices are grown on sapphire substrate and we used PEDOT:PSS film as Schotky transparent film formed by ink-jet method. We obtained good crystal quality by using very thin 3nm MgO buffer on c-plane sapphire, and by using this buffer technique we obtained 20meV reverse Stark shift in UV region by applying a reverse voltage of 7V.Secondly we have studied about low voltage operation posibility of optical modulator using ZnO/ZnMgO quantum wells. We used electro-chemical electrode as a Schotky contact to ZnO surface, and we obtained 20meV reverse Stark shift by small reverse bias of 2V.These results shows that ZnO/ZnMgO quantum wells have a good potential for UV optical modulator.