Development of Piezoelectric Scaffold using Lead-Free Piezoelectric Material MgSiO_3 for bone regeneration
无铅压电材料MgSiO_3用于骨再生的压电支架的研制
基本信息
- 批准号:23560104
- 负责人:
- 金额:$ 3.33万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2011
- 资助国家:日本
- 起止时间:2011 至 2013
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
MgSiO_3 (MSO) thin film was fabricated by RF magnetron sputtering to develop new scaffold to accelerate bone formation. Single-layer, double-layer and triple-layer MSO thin film were fabricated on Cu/Ti/Si (100) substrate by RF magnetron sputtering. According to X-ray diffraction analysis, crystal growth along (111) orientation was confirmed for all MSO thin films. The surface potential was induced due to spontaneous polarization, and it decreased with increasing the number of layer. The culture system was developed to culture bone cells on the MSO thin film with 4-point cyclic bending deformation. Alternative sinusoidal waveform of the electric potential was observed for all MSO thin films, when pulsating cyclic bending deformation was applied to the MSO thin film by 4-point cyclic bending deformation. The peak value increased with the number of layer. These results showed that generated MSO (111) thin film can be used as coating material to enhance bone formation.In order to investig … More ate the effects of cyclic surface potential of BaTiO_3 (BTO) induced with its deformation on osteogenic differentiation of osteoblast-like cells in vitro, osteoblast-like cells were cultured on BTO with or without compressive deformation. Polarized BTO and non-polarized BTO were prepared as specimen. Cyclic compressive load was applied to the BTO by a fatigue testing machine. The surface potential of polarized BTO due to spontaneous polarization was almost same as that of non-polarized BTO. Alternative sinusoidal waveform of the surface potential was observed on the BTO with frequency of deformation. ALP activity of osteoblast-like cells cultured on polarized BTO with compressive deformation was highest, whereas there were no significant differences in ALP activity of osteoblast-like cells cultured on polarized BTO and non-polarized BTO without compressive deformation. These results showed that the surface potential induced on piezoelectric material surface with deformation enhanced osteogenic differentiation. Less
采用射频磁控溅射法制备了MgSiO_3(MSO)薄膜,以开发新型的骨促进支架。采用射频磁控溅射法在Cu/Ti/Si(100)衬底上制备了单层、双层和三层MSO薄膜。根据X射线衍射分析,证实所有MSO薄膜的晶体生长沿沿着(111)取向。表面电位是由自发极化引起的,随着层数的增加而降低。建立了在MSO薄膜上进行骨细胞培养的4点循环弯曲变形培养系统。交替正弦波形的电势观察到所有的MSO薄膜,当脉动循环弯曲变形施加到MSO薄膜的4点循环弯曲变形。峰值随层数的增加而增大。这些结果表明,生成的MSO(111)薄膜可以用作涂层材料,以促进骨形成。 ...更多信息 为探讨BaTiO_3(BTO)形变诱导的表面循环电位对体外成骨样细胞成骨分化的影响,将成骨样细胞在BTO上进行了体外培养。制备了极化和非极化的BTO作为样品。通过疲劳试验机对BTO施加循环压缩载荷。自发极化引起的极化BTO的表面电位与非极化BTO的表面电位基本相同。观察到BTO表面电位随形变频率变化的正弦波形。成骨样细胞在极化BTO上培养时ALP活性最高,而在极化BTO和非极化BTO上培养时ALP活性无显著差异。这些结果表明,压电材料表面的表面电位与变形促进成骨分化。少
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
骨形成促進のための圧電材料MgSiO3薄膜の創製技術の開発
促进骨形成压电材料MgSiO3薄膜创制技术开发
- DOI:
- 发表时间:2014
- 期刊:
- 影响因子:0
- 作者:K. Takeda;H. Tobushi;K. Mitsui;Y. Nishimura and K. Miyamoto;中崎 真太郎,森田 有亮,片山傳生,仲町 英治
- 通讯作者:中崎 真太郎,森田 有亮,片山傳生,仲町 英治
変形に伴うBaTiO_3の表面電位がラット骨髄細胞の骨芽細胞への分化に及ぼす影響
BaTiO_3形变表面电位对大鼠骨髓细胞向成骨细胞分化的影响
- DOI:
- 发表时间:2013
- 期刊:
- 影响因子:0
- 作者:Kazuhiro Suga;Masanori Kikuchi;Shota Kawasaki;加藤優喜,森田有亮,仲町英治
- 通讯作者:加藤優喜,森田有亮,仲町英治
Effects of Surface Potential Induced by Cyclic Deformation of BaTiO_3 on Osteogenic Differentiation of Rat Bone Marrow Cells
BaTiO_3循环变形诱导表面电位对大鼠骨髓细胞成骨分化的影响
- DOI:
- 发表时间:2013
- 期刊:
- 影响因子:0
- 作者:Yuki Kato;Yusuke Morita;Eiji Nakamachi
- 通讯作者:Eiji Nakamachi
繰り返し圧縮荷重下における圧電材料BaTiO_3がラット骨髄細胞に及ぼす影響
重复压缩载荷下压电材料BaTiO_3对大鼠骨髓细胞的影响
- DOI:
- 发表时间:2012
- 期刊:
- 影响因子:0
- 作者:菊池正紀;和田義孝;須賀一博;大玉千香子;金子堅司,田沼遊太郎;加藤優喜,森田有亮,仲町英治
- 通讯作者:加藤優喜,森田有亮,仲町英治
骨形成促進のための圧電材料MgSiO_3薄膜の創製技術の開発
促骨形成压电材料MgSiO_3薄膜制备技术开发
- DOI:
- 发表时间:2014
- 期刊:
- 影响因子:0
- 作者:釜谷昌幸;佐々貴洋;菊池正紀;倉前宏行,仲町英治;中崎真太郎,森田有亮,片山傳生,仲町英治
- 通讯作者:中崎真太郎,森田有亮,片山傳生,仲町英治
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KATAYAMA Tsutao其他文献
KATAYAMA Tsutao的其他文献
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{{ truncateString('KATAYAMA Tsutao', 18)}}的其他基金
Development of three-dimensional polylactic acid-piezoelectric material scaffold
三维聚乳酸-压电材料支架的研制
- 批准号:
20560091 - 财政年份:2008
- 资助金额:
$ 3.33万 - 项目类别:
Grant-in-Aid for Scientific Research (C)