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Development of low damage high rate sputter-deposition process for the fabrication of OLED

Development of low damage high rate sputter-deposition process for the fabrication of OLED
开发用于 OLED 制造的低损伤高速率溅射沉积工艺
批准号:
23560374
负责人:
HOSHI YOICHI
金额:
$3.49万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2013

项目摘要

项目成果

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中文摘要
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英文摘要
In the fabrication of an organic light emitting diode (OLED), the deposition of top electrode films by using the sputtering technique led to a significant increase in its operating voltage. Therefore, the development of a sputter-deposition process without such unwanted phenomena is greatly desired. In this work, we have proposed low damage facing target sputtering (FTS) method for the deposition of the top electrode films with significantly low levels of damage and tried to confirm the effectiveness of the sputter-deposition method. As a results, it was clarified that the low damage FTS was useful to improve the operating characteristics of the OLED, although a complete suppression of the incidence of high energy secondary electrons to the substrate was necessary. In addition, optimization of the sputtering conditions such as sputtering gas pressure and sputtering current were also effective to improve the operating characteristics of the OLED.
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