Study on high-efficiency chalcopyrite-based intermediate-band solar cells

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In order to fabricate high-efficiency solar cells using a chalcopyrite-type semiconductor, CuGaS2, to which an intermediate band is introduced by impurity doping, several subjects have been studied.It was found that a large Cu/Ga supply ratio is necessary for obtaining high-quality crystals in molecular beam epitaxy of CuGaS2. In addition, in order to introduce an intermediate band to CuGaS2, doping of Mn and other transition metal elements has been studied. It was found that Mn atoms can be incorporated into CuGaS2 up to high density, however, the formation of an intermediate band or an improvement in solar cell efficiency have not been confirmed yet.