Development of measurement method and engineering of Ge/Si interfacial thermal conductance

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A measurement method of interfacial thermal resistance for semiconductor/semiconductor interface has been developed. Molecular dynamics simulation has been performed on Si/Ge interface, including interfaces with vacancies and atomic diffusion. The phonon DOS and relaxation time at the interfacial region, and the interfacial thermal resistance have been calculated. The shift of phonon DOS, frequency dependence of phonon relaxation time and their effects on interfacial thermal resistance have been analyzed. Out-of-plane thermal conductivity of sputtered amorphous and polycrystalline Ge(Si) thin films and Si/Ge interfacial thermal resistance have been measured. The Si/Ge interfacial thermal resistance is found strongly dependent on the crystalline state and roughness of the interface.