Fabrication of Conductive Quantum Wire by using Dislocation Array

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In this work, a conductive quantum wire was fabricated by using high-temperature segregation behavior of a metallic dopant along a dislocation core in an insulating MgO bicrystal grain boundary (GB) and then was characterized by a scanning TEM (STEM) and a first-principle calculation. The STEM image and electron energy loss spectrum (EELS) mapping showed that a structure unit in the MgO GB is formed to compensate lattice mismatch and calcium (Ca) and titanium (Ti) impurities are strongly localized in the GB. The first-principle calculation revealed that the segregated Ti atoms form conductive channels along the GB suggesting semi-conductor like behavior. By using self-segregation behavior along a dislocation core, we demonstrated to fabricate a low dimensional quantum structure with a specific electronic property in an insulating solid crystal.