Analysis of interface between electrode and zinc oxide semiconductor for ultraviolet photo device

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Schottky contact is essential for rectifiability between electrode and zinc oxide (ZnO) which can be applied as ultraviolet photo device. However, it was difficult to control formation of the electrode with stable Schottky contact. Elucidation of correlation between contacts and material properties has been required. Pd/ZnO interface was analyzed as model system by using a high-voltage high-resolution transmission electron microscope. The local atomic structure could by quantitatively determined and the interfacial electric state was simulated by first principle calculation. The correlation between the local atomic structure and electric properties could be elucidated.