Preparation and applications of bismuth-layer-structured ferroelectric nanoplates grown epitaxially on Nb:TiO2 substrates

采用高温溅射法制备了a轴和b轴取向Bi3.25Nd0.75Ti3O12 （BNT-0.75）和Bi3.25Nd0.75-xEuxTi3O12 （BNEuT, x = 0-0.75）薄膜，薄膜厚度为3.0 um。研究了制备铁电纳米板的最佳溅射条件（过量Bi2O3、沉积温度、气体压力和有效功率密度）。通过对合成的铋层结构铁电纳米板的物理性质进行评价，表明所制备的纳米板具有作为铁、压电和多铁性微元素材料的潜力。

a- and b-axis-oriented Bi3.25Nd0.75Ti3O12 (BNT-0.75) and Bi3.25Nd0.75-xEuxTi3O12 (BNEuT, x = 0-0.75) films of 3.0 um thickness were fabricated on conductive Nb:TiO2(101) substrates containing 0-0.79 mass% Nb by high-temperature sputtering. The optimal sputtering conditions (excess Bi2O3, deposition temperature, gas pressure and effective power density) to fabricate the ferroelectric nanoplates were investigated. By evaluating the physical properties of the resultant bismuth layer-structured ferroelectric nanoplates, it was demonstrated that the developed nanoplates had the potential as microelement materials for ferro- and piezoelectric, and multiferroic applications.