Development of a new radiation detector with organic semiconductor by fabricating nano structure and mono-crystallization

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To increase the radiation detection efficiency of heterojunction organic photodiode, we fabricated nano structures between the n-type and p-type layers. From the X-ray irradiation experiments, it has been shown that the X-ray induced current increased by 23 % compared with the device without the nano structure. However, as the device properties were different between the fabrication batch processes, investigation of the fabrication process should be continued.Effect of the crystallization of the device has been studied with changing the cooling time after the annealing process of the device. When the cooling time was set to 150 minutes, the X-ray induced current was at maximum value. Further study is necessary to know the best fabrication process.