Light-element semiconductors

轻元素半导体

• 批准号: 23654077
• 负责人: LIPPMAA Mikk
• 金额: $ 2.41万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23654077/
• 关键词: 粒子測定技術; 軽元素の半導体

The growth of BeO and BeZnO thin films by pulsed laser deposition was studied. A stability diagram was constructed for the growth of crystalline BeO films. It was discovered that it is possible to grow crystalline films even at room temperature. The available alloying limits were determined for both Zn- and Be-rich BeZnO semiconductor films. X-ray dosimetry function was evaluated in Be-doped ZnO films.

研究了脉冲激光沉积法制备BeO和BeZnO薄膜的工艺。构建了结晶BeO薄膜生长的稳定性图。发现即使在室温下也可以生长结晶膜。可用的合金化的限制，确定为Zn和Be丰富的BeZnO半导体薄膜。X射线剂量学功能进行了评估，在Be掺杂的ZnO薄膜。

项目成果

BeO-ZnO混晶薄膜の作製

BeO-ZnO混晶薄膜的制备

• 发表时间: 2013
• 作者: T.Peltier,高橋竜太;Mikk Lippmaa
• 通讯作者: Mikk Lippmaa

BeO-ZnO alloy thin films

BeO-ZnO合金薄膜

• 发表时间: 2013
• 作者: P. Thomas;R. Takahashi;and M. Lippmaa
• 通讯作者: and M. Lippmaa

サファイア基盤上におけるBeO薄膜の作製

蓝宝石衬底上BeO薄膜的制备

• 发表时间: 2012
• 作者: T.Peltier,高橋竜太;Mikk Lippmaa
• 通讯作者: Mikk Lippmaa