Growth of RT multiferroic artificial superlattice using ALD

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The aim of the present study is to develop ferroelectric materials without lead which is harmful to environment. In particular, this study has been carried out with the aim of layer-by-layer growth of BiFeO3 using atomic layer deposition (ALD). One of the advantage of ALD is the ability of growth at low temperature.At first, oxide films which include either Fe or Bi were fabricated. Using Bi(ph)3 and Fe(Cp)2 as Bi and Fe precursors which are easily decomposed at low tenperature, oxide films of Bi and Fe were successfully formed. In addition, the combination of Bi(ph)3 and Fe(Cp)2 results in the layer-by-layer growth of BiFeO3 using ALD.