Development of MT-FET for chemical sensor with molecular wire

制备了用于化学传感器器件的有机场效应晶体管（FET）的低维导电层，该导电层由有机材料（P3HT或厚度约10 nm的并五苯与分子识别材料耦合而成）组成，该导电层基于mott跃迁等机制，可以在外部化学物质的作用下表现出开关特性。结果表明，气体应用改变了FET的性能，而添加分子识别层可以改变传感器的响应。此外，利用具有表面修饰层的金纳米颗粒桥接的纳米间隙电极，研究了低维导电层对化学物质的响应机制。

Low dimensional conductive layers composed of organic material (P3HT or pentacene with a few 10 nm thickness coupled with molecular recognizing materials), which could exhibit switching properties by external chemicals based on mechanisms as Mott-transition, were fabricated for organic FET for chemical sensor devices. As a result, FET properties were changed by gas application, and sensor response can be altered by addition of molecular recognition layers. Furthermore, it wan confirmed that response mechanism of low dimensional conductive layer to chemical substances was examined with nanogap electrode bridged by gold nanoparticles having a surface modification layer.