Development of MT-FET for chemical sensor with molecular wire

低维导电层由有机材料（P3HT或并五苯，具有几个10 nm的厚度与分子识别材料耦合）组成，其可以基于Mott转变机制通过外部化学物质表现出开关特性，用于化学传感器器件的有机FET。因此，FET的性能被气体应用改变，并且传感器响应可以通过添加分子识别层来改变。此外，还证实了具有表面修饰层的金纳米颗粒桥接的纳米间隙电极检测了低维导电层对化学物质的响应机制。

Low dimensional conductive layers composed of organic material (P3HT or pentacene with a few 10 nm thickness coupled with molecular recognizing materials), which could exhibit switching properties by external chemicals based on mechanisms as Mott-transition, were fabricated for organic FET for chemical sensor devices. As a result, FET properties were changed by gas application, and sensor response can be altered by addition of molecular recognition layers. Furthermore, it wan confirmed that response mechanism of low dimensional conductive layer to chemical substances was examined with nanogap electrode bridged by gold nanoparticles having a surface modification layer.