Development of Crystal Growth Technology of Shaped Langasite-type Piezoelectric Crystals by Micro-Pulling-Down Method

微下拉法成形硅锰矿型压电晶体生长技术的研究

• 批准号: 23750234
• 负责人: YUUI Yokota
• 金额: $ 2.83万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23750234/
• 关键词: 結晶・多結晶材料; 結晶材料開発; ランガサイト; 圧電結晶; 国際情報交流

Shape-controlled langasite-type piezoelectric single crystals were grown by micro-pulling-down method and the physical properties of grown crystals were investigated. Columnar, plate and tube-shaped crystals with a-axis and c-axis in growth direction were grown and the diameters of grown columnar-shaped crystals were controlled approximately 3 mm from initial to later part. The grown crystals without cracks indicated relatively high crystallinities and a single phase of langasite-type structure in the powder XRD patterns. The piezoelectric constant d11 of CNGS crystal indicated 3.98 pC/N which was well accorded with the previous report.

采用微下拉生长方法生长了形状可控的Langasite型压电单晶，并对生长的晶体的物理性能进行了研究。生长出了a轴和c轴分别为a轴和c轴的柱状、板状和管状晶体，生长的柱状晶体从开始到后期的直径控制在3 mm左右。无裂纹生长的晶体在粉末X射线衍射图上显示出较高的结晶度和单相的Langasite结构。CNGs晶体的压电常数d11为3.98pC/N，与文献报道相吻合。

项目成果

平板状及びチューブ状Ca3NbGa3Si2O14圧電結晶の結晶育成と特性評価

平面和管状 Ca3NbGa3Si2O14 压电晶体的晶体生长和性能评估

• 发表时间: 2012
• 作者: 横田有為;二見能資;佐藤真人;遠田一重;藤本裕;黒澤俊介;小野寺晃;吉川彰
• 通讯作者: 吉川彰

Shaped crystal growth of langasite-type piezoelectric single crystals and their physical properties

• DOI: 10.1109/tuffc.2012.2398
• 发表时间: 2011-07
• 期刊: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control
• 作者: Y. Yokota;A. Yoshikawa;Y. Futami;Masato Sato;K. Tota;K. Onodera;T. Yanagida

Development of functional single crystals by micro-pulling-down method

微下拉法功能单晶的开发

• 发表时间: 2013
• 作者: Y. Yokota;S. Kurosawa;K. Nishimoto;M. Sato;H. Goto;K. Shikimura;K. Tota;T. Ito;T. Kagaya;K. Onodera;K. Kamada;A. Yoshikawa
• 通讯作者: A. Yoshikawa

Shaped crystal growth of langasite-type piezoelectric single crystals and their physical properties Yoshikawa

硅锰矿型压电单晶的异形晶体生长及其物理性能 Yoshikawa

• 发表时间: 2011
• 作者: Y.Yokota;M.Sato;K.Tota;Y.Futami1;A.Yamaji;T.Yanagida;K.Onodera
• 通讯作者: K.Onodera

Annealing Effects for Ca3NbGa3Si2O14 Piezoelectric Single Crystals Grown by Micro-Pulling-Down Method

• DOI: 10.1080/00150193.2013.843383
• 发表时间: 2013-01
• 期刊: Ferroelectrics
• 影响因子: 0.8
• 作者: Y. Yokota;Masanori Kitahara;S. Kurosawa;Masato Sato;Kazushige Tota;K. Onodera;A. Yoshikawa