Gd neutron converter doped semiconductor thermal neutron detectors

制备了一种用于热中子成像的新型结构探测器--Gd掺杂半导体探测器。该探测器具有明显的整流特性，能像传统的CdTe探测器一样测量伽马射线源的能谱。在中子源的测量中，探测到了常规的CdTe探测器无法探测到的内转换电子。本研究表明，中子转换器的掺杂有可能提高热中子的探测效率。

Gd-doped CdTe semiconductor detector was prepared as a new structure detector for thermal neutron imaging. The detector showed clear rectifying property and it was able to measure the energy spectra of gamma-ray sources like a conventional CdTe detector. In the measurement of the neutron source, the internal conversion electrons which can’t be detected by conventional CdTe detector were detected. This study indicated that doping of neutron converter is possible to improve the detection efficiency of thermal neutron.