The invention of a two-dimensional thermal diode by using a compositionally graded thin film
The invention of a two-dimensional thermal diode by using a compositionally graded thin film
批准号:
23760191
负责人:
NISHIYAMA Takashi
金额:
$2.91万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2012
中文摘要
热二极管样品采用重力辅助脉冲激光烧蚀法(GAPLA)制备。GAPLA是一种将脉冲激光沉积和超重力效应相结合的成分梯度薄膜制备方法。本研究旨在探讨薄膜材料质量梯度对热整流的影响。作为一种适合于揭示热整流效应的轻元素和重元素的组合,进行了B-Bi组分梯度薄膜的GAPLA实验。由于硼薄膜的质量很轻,很难控制其残余体积,也没有实现热整流。然而,在本研究的过程中获得的组成梯度薄膜,包括Si-Fe系统的知识成为什么是非常有用的,为未来的研究。
英文摘要
The thermal diode samples are fabricated by the gravity assisted pulse laser ablation method (GAPLA). GAPLA is one of the compositionally graded thin film fabrication methods that is combined pulsed laser deposition and high gravity effect. The purpose of this research is to investigate the thermal rectification by the mass gradient of thin film material. As a combination of a light element and a heavy element suitable for revelation of a thermal rectification effect, the GAPLA experiments of the compositionally gradientthin film of B-Bi were conducted. It is difficult to control the residual volume to the thin film of boron because of its very light weight, and has not resulted in realization of thermal rectification. However, the knowledge about compositionally graded thin films including the Si-Fe system obtained in the process of this research became what is greatly useful for future research.
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