The invention of a two-dimensional thermal diode by using a compositionally graded thin film
The invention of a two-dimensional thermal diode by using a compositionally graded thin film
批准号:
23760191
负责人:
NISHIYAMA Takashi
金额:
$2.91万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2012
中文摘要
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英文摘要
The thermal diode samples are fabricated by the gravity assisted pulse laser ablation method (GAPLA). GAPLA is one of the compositionally graded thin film fabrication methods that is combined pulsed laser deposition and high gravity effect. The purpose of this research is to investigate the thermal rectification by the mass gradient of thin film material. As a combination of a light element and a heavy element suitable for revelation of a thermal rectification effect, the GAPLA experiments of the compositionally gradientthin film of B-Bi were conducted. It is difficult to control the residual volume to the thin film of boron because of its very light weight, and has not resulted in realization of thermal rectification. However, the knowledge about compositionally graded thin films including the Si-Fe system obtained in the process of this research became what is greatly useful for future research.
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