Fabrication of ordered aluminum surface based on pattern transfer using sphere mask

基于球形掩模图案转移的有序铝表面制造

• 批准号: 23760703
• 负责人: ASOH Hidetaka
• 金额: $ 2.75万
• 依托单位: Kogakuin University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23760703/
• 关键词: 微細加工; 構造転写技術; 材料加工・処理; アノード酸化; コロイド結晶

To fabricate ordered patterns on various substrates such as aluminum and semiconductors, a photoresist mask with periodic opening arrays was prepared by sphere photolithography. The diameter and interval of the openings of the photoresist mask could be controlled independently by adjusting the diameter of silica spheres used as a lens and exposure time. For example, through this resist mask with a two-dimensional (2D) hexagonal array of openings, the pore growth of InP during anodic etching was investigated. The isolated openings could act as initiation sites for the radial growth of pores, resulting in the formation of 2D hexagonal geometric patterns. A natural lithographic approach based on the structural feature of spontaneously generated patterns will offer a new route to the fundamental study of the fabrication of ordered surfaces over large area.

为了在铝和半导体等多种衬底上制备有序图形，采用球面光刻技术制备了具有周期性开口阵列的光刻胶掩模。通过调整作为透镜的二氧化硅球体的直径和曝光时间，可以独立控制光刻胶掩模开口的直径和间距。例如，通过这种具有二维(2D)六角形开口阵列的抗蚀剂掩模，研究了InP在阳极腐蚀过程中的孔生长。这些孤立的开口可以作为孔径向生长的起始点，从而形成二维六角形几何图形。基于自发图形结构特征的自然光刻方法将为大面积有序表面的基础研究提供一条新的途径。

项目成果

GaAsの金属触媒エッチングに対するエッチャント温度の効果

刻蚀剂温度对GaAs金属催化刻蚀的影响

• 发表时间: 2013
• 作者: 越崎 直人;Alexander Pyatenko;Xiangyou Li;Zaneta Swiatkowska;石川 善恵;宮崎 忠;阿相英孝,尾熊健一,小野幸子
• 通讯作者: 阿相英孝,尾熊健一,小野幸子

Fabrication and structure modulation of high-aspect-ratio porous GaAs through anisotropic chemical etching, anodic etching, and anodic oxidation

• DOI: 10.1016/j.electacta.2013.06.025
• 发表时间: 2013-11
• 期刊: Electrochimica Acta
• 影响因子: 6.6
• 作者: S. Ono;Shunsuke Kotaka;H. Asoh

結晶異方性エッチングによる半導体のマイクロ・ナノ規則構造体の作製

晶体各向异性刻蚀制备半导体微纳有序结构

• 发表时间: 2013
• 作者: 越崎 直人;Yue Li;石川 善恵;宮崎忠;小野幸子,阿相英孝
• 通讯作者: 小野幸子,阿相英孝

High-Aspect-Ratio Nanotructures of Pore and Pillar Arrays of Semiconductors Fabricated by Wet Etching Using Sphere Photolithography

使用球光刻湿法蚀刻制造半导体孔和柱阵列的高纵横比纳米结构

• 发表时间: 2012
• 作者: S. Ono;S. Kotaka;J. Iwata;K. Fujihara and H. Asoh
• 通讯作者: K. Fujihara and H. Asoh

High-Aspect-Ratio Nanostructures of Semiconductors Fabricated by Chemical and Electrochemical Etchings

通过化学和电化学蚀刻制造的高深宽比半导体纳米结构

• 作者: Kuwahara;Y.;Yamanishi;T.;Kamegawa;T.;Mori;K.;Yamashita;H.;諸貫修一，相澤祐香，阿相英孝，森陽一，閤師昭彦，廖金孫，小野幸子;Takehiro Nakanishi・Tadanori Hashimoto・Hiroyuki Nasu・Atsushi Ishihara;S. Ono and H. Asoh
• 通讯作者: S. Ono and H. Asoh