RT spin injection to Si using ferromagnetic insulator

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The purpose of this work is to realize the high efficiency spin injection to Si at RT by applying the spin-filter effect of Co ferrite. Two kinds of oxidation method, radical and ozone, were tried to obtain high quality Co ferrite without antiphase boundaries(APB) and oxygen defects which act as the hopping sites for electron conduction. It was found that the number of the density of APBs and defects in the Co ferrite made by the radial and ozone are similar to that by the thermal oxidation and the spin-filter effect at RT was quite low compared with that at 10 K.