Interface structure of organic transistors

有机晶体管的界面结构

• 批准号: 23684026
• 负责人: WAKABAYASHI Yusuke
• 金额: $ 2.33万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (A)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-11-18 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23684026/
• 关键词: 表面・界面物性; 物性実験; 固液界面; 放射光; 有機デバイス; イオン液体

Current technology to fabricate electronic devices is based on Si. However, recent study revealed that organic semiconductors can be utilized for making devices with totally different characteristics, such as lightweight, flexible devices. In this study, we performed structural study of interfaces to improve organic devices. High resolution, non-destructive measurements of interfaces were realized by using surface synchrotron X-ray diffraction technique. We clarified two interface structures; one is the surface structure of organic semiconductor tetracene, and the other is the electric double layer structure made of ionic liquid. The latter includes applied electric voltage dependence of the structure. Layered arrangement of the anions/cations was observed, and the ionic arrangement was controlled by the applied voltage.

目前制造电子器件的技术基于Si。然而，最近的研究表明，有机半导体可以用于制造具有完全不同特性的器件，例如轻质，柔性器件。在这项研究中，我们进行了界面的结构研究，以改善有机器件。利用表面同步辐射X射线衍射技术实现了界面的高分辨率、无损测量。阐明了两种界面结构，一种是有机半导体并四苯的表面结构，另一种是离子液体形成的双电层结构。后者包括结构的外加电压依赖性。观察到阴离子/阳离子的层状排列，并且离子排列由所施加的电压控制。

项目成果

External electric field dependence of the structure of the electric double layer at an ionic liquid/Au interface

• DOI: 10.1063/1.4742920
• 发表时间: 2012-08
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: R. Yamamoto;H. Morisaki;O. Sakata;H. Shimotani;Hongtao Yuan;Y. Iwasa;T. Kimura;Y. Wakabayashi

Chiral Domain Imaging in DyFe3(BO3)4 observed by resonant x-ray diffraction

通过共振 X 射线衍射观察 DyFe3(BO3)4 中的手性域成像

• 发表时间: 2013
• 作者: T. Usui;Y. Tanaka;H. Nakajima;Y. Wakabayashi;S. Shin;and T. Kimura
• 通讯作者: and T. Kimura

Near Surface Structure of Organic Semiconductor Tetracene Single Crystal

有机半导体并四苯单晶的近表面结构

• 作者: Y.~Wakabayashi;H.Morisaki;T.Kimura;K.Miwa;T.Koretsune;J.Takeya
• 通讯作者: J.Takeya

Ba3CuSb2O9のCu/Sb短距離秩序構造

Ba3CuSb2O9 的 Cu/Sb 短程有序结构

• 作者: K. Shimamura;D. Chiba;S. Ono;S. Fukami;N;Ishiwata;M;Kawaguchi;K. Kobayashi;and T;Ono;池上弘樹;山本倫久;若林裕助，中島大輔，木村健太，木村剛，中辻知
• 通讯作者: 若林裕助，中島大輔，木村健太，木村剛，中辻知

テトラセン単結晶の表面電子密度解析

并四苯单晶的表面电子密度分析

• 发表时间: 2013
• 作者: Yasushi Nishihara;Megumi Kinoshita;Keita Hyodo;Yasuhiro Okuda;Ritsuko Eguchi;Hidenori Goto;Shino Hamao;Yasuhiro Takabayashi;and Yoshihiro Kubozono;森崎はづき，三輪一元，竹谷純一，木村剛，若林裕助
• 通讯作者: 森崎はづき，三輪一元，竹谷純一，木村剛，若林裕助