Preparation of low dislocation density and deep-UV transparent AlN substrates by hydride vapor phase epitaxy

氢化物气相外延制备低位错密度深紫外透明AlN衬底

• 批准号: 24360006
• 负责人: KUMAGAI Yoshinao
• 金额: $ 12.23万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2015-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-24360006/
• 关键词: 窒化アルミニウム; 転位密度; 深紫外光透過性; HVPE法; 不純物; 深紫外線LED; MOVPE法; 昇華法; 深紫外発光ダイオード

项目成果

On the origin of the 265 nm absorption band in AlN bulk crystals

• DOI: 10.1063/1.4717623
• 发表时间: 2012-05
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: R. Collazo;Jinqiao Xie;Benjamin E. Gaddy;Z. Bryan;R. Kirste;M. Hoffmann;R. Dalmau;B. Moody;Y. Kumagai;Toru Nagashima;Y. Kubota;T. Kinoshita;A. Koukitu;D. Irving;Z. Sitar

Hetero- and Homo-Epitaxy of Thick AIN Layers by Hydride Vapor Phase Epitaxy

通过氢化物气相外延进行厚 AlN 层的异质和同质外延

• 发表时间: 2012
• 作者: Y;Kumagai;Y;Kubota;T;Nagashima;T;Kinoshita;R;Dalmau;R;Schlesser;B;Moody;J;Xie;H;Murakami;A;Koukitu;Z;Sitar
• 通讯作者: Sitar

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

• DOI: 10.1063/1.4824731
• 发表时间: 2013-10-14
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Gaddy, Benjamin E.;Bryan, Zachary;Irving, Douglas L.
• 通讯作者: Irving, Douglas L.

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

在物理气相传输制备的块状 AlN 衬底上通过氢化物气相外延生长厚 AlN 层制备独立式 AlN 衬底

• 发表时间: 2012
• 期刊: Applied Physics Express
• 影响因子: 2.3
• 作者: Yoshinao Kumagai;Yuki Kubota;Toru Nagashima;Toru Kinoshita;Rafael Dalmau;Raoul Schlesser;Baxter Moody;Jinqiao Xie;Hisashi Murakami;Akinori Koukitu;Zlatko Sitar
• 通讯作者: Zlatko Sitar

Growth of AlN by Hydride Vapor Phase Epitaxy

氢化物气相外延生长 AlN

• 发表时间: 2014
• 作者: Y. Kumagai;T. Nagashima;T. Kinoshita;B. Moody;R. Togashi;H. Murakami;R. Collazo;A. Koukitu and Z. Sitar
• 通讯作者: A. Koukitu and Z. Sitar