Irradiation creep and the underlying mechanisms of ion-irradiated SiC

离子辐照 SiC 的辐照蠕变及其潜在机制

• 批准号: 24760715
• 负责人: KONDO Souske
• 金额: $ 2.83万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-24760715/
• 关键词: 炭化ケイ素; 照射クリープ; スウェリング; 照射損傷; シリコンカーバイド; 電子顕微鏡

Irradiation creep in SiC was studied by an ion-irradiation under various conditions. The tensioned surfaces of bent thin samples were irradiated with Si ions up to 3 dpa at 553K-1473K, which is referred to as a single-ion test. Additional He ions were irradiated simultaneously in the dual-ion test to study the effects of transmuted He on irradiation creep. Irradiation creep was found at >673K in the single-ion case, where a linear relationship between irradiation creep and swelling (C/S) was observed at 673-1073K for all stress levels. The proportional constant of the C/S relationship was strongly dependent on temperature and stress. On the basis of the TEM study, anisotropic distribution of SIA clusters was suspected to be the primary creep mechanism. For the dual-ion cases, irradiation creep was very limited at temperatures of 673-1073K. TEM study indicated that helium inhibited the stable growth of SIA clusters and prevented them from exhibiting anisotropic distribution.

采用离子辐照法研究了不同条件下碳化硅的辐照蠕变。在553K-1473K的温度下，用高达3dpa的Si离子照射弯曲薄样品的拉伸表面，这被称为单离子测试。在双离子试验中，同时辐照其他He离子，研究嬗变He对辐照蠕变的影响。在单离子情况下，辐照蠕变在bb0 ~ 673K处，在673 ~ 1073k处，辐照蠕变与溶胀（C/S）呈线性关系。C/S关系的比例常数与温度和应力的关系密切相关。在TEM研究的基础上，推测SIA团簇的各向异性分布是主要的蠕变机制。对于双离子情况，在673 ~ 1073k的温度下，辐照蠕变非常有限。透射电镜研究表明，氦抑制了SIA簇的稳定生长，阻止了它们的各向异性分布。

项目成果

SiC/SiC複合材料の低温高線量照射後の微細組織変化

SiC/SiC复合材料低温高剂量辐照后微观结构的变化

• 发表时间: 2013
• 作者: Sosuke Kondo;Takaaki Koyanagi;Tatsuya Hinoki;近藤創介;近藤創介,野中誠人,檜木達也,小沢和巳
• 通讯作者: 近藤創介,野中誠人,檜木達也,小沢和巳

Helium effect on the irradiation creep of silicon carbide

氦气对碳化硅辐照蠕变的影响

• 发表时间: 2012
• 作者: Sosuke Kondo;Takaaki Koyanagi;Tatsuya Hinoki
• 通讯作者: Tatsuya Hinoki

Irradiation Induced Creep of Silicon Carbide

碳化硅的辐照诱导蠕变

• 发表时间: 2013
• 作者: Sosuke Kondo;Takaaki Koyanagi;Tatsuya Hinoki;近藤創介
• 通讯作者: 近藤創介

イオン照射したSiCの寸法変化に及ぼす損傷速度効果

损伤率对离子辐照SiC尺寸变化的影响

• 发表时间: 2013
• 作者: 近藤 創介;小柳 孝彰; 野中 誠人; 檜木 達也
• 通讯作者: 檜木 達也