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電界効果トランジスタゲートスタック絶縁膜形成機構と絶縁破壊機構統合モデルの研究

场效应晶体管栅叠层绝缘膜形成机理与介质击穿机理集成模型研究

基本信息

批准号：
14J04955
负责人：
唐佳芸
金额：
$ 1.09万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for JSPS Fellows
财政年份：
2014
资助国家：
日本
起止时间：
2014-04-25 至 2016-03-31
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14J04955/
关键词：
Si oxide decomposition XPS STM real-time strain defect interface oxidation Si(111)Si(001)surface oxidation oxide decomposition point defect

项目摘要

The rapid temperature oxidation kinetics on Si(001) surfaces was investigated by real-time X-ray photoelectron spectroscopy (XPS) using synchrotron radiation to observe the SiO2 growth rate and interfacial strain simultaneously during oxidation. It was observed that the SiO2 growth rate was enhanced 5.0 times by cooling temperature. The SiO2 oxide growth kinetics is interpreted well by extending the unified Si oxidation reaction model, where oxide growth rate dRSiO2/dt is in proportion to the increase of the interfacial strain. This implies that further oxidation is prone to occur around the place where oxides are newly grown at low temperature, leading to a roughening of the SiO2/Si interface morphology. The thermal decomposition kinetics of very thin oxide layers grown on Si(001) and Si(111) surfaces were investigated experimentally by XPS, ultraviolet photoelectron spectroscopy and scanning tunneling microscopy to clarify the void nucleation and growth reaction mechanisms from a viewpoint of the decomposition-induced strain. It was observed that the amount of strained Si atoms increased in proportion to the amount of oxide decomposed during the void nucleation. This was interpreted by using a proposed decomposition model, where there is an undershoot profile of the strain at the periphery of the accumulated void area and the magnitude of the undershoot strain increased in proportion to the amount of vacancies.Based on the above studies, the unified Si oxidation reaction model consist of both the oxide growth and oxide decomposition was verified and further extended.

用同步辐射实时X射线光电子能谱(XPS)研究了Si(001)表面的快速温度氧化动力学，同时观测了氧化过程中的SiO_2生长速率和界面应变。实验结果表明，冷却温度使SiO_2生长速率提高了5.0倍。扩展了统一的硅氧化反应模型，较好地解释了SiO_2氧化物生长动力学，其中氧化物生长速率dRSiO_2/dt与界面应变的增加成正比。这意味着在低温下新生长的氧化物的位置附近容易发生进一步的氧化，导致SiO_2/Si界面形态的粗化。用XPS、紫外光电子能谱和扫描隧道显微镜研究了在Si(001)和Si(111)表面生长的超薄氧化层的热分解动力学，从分解诱导应变的角度阐明了空穴形核和生长的反应机理。观察到应变硅原子的数量与空穴形核过程中分解的氧化物的数量成正比。在此基础上，验证并进一步推广了由氧化物生长和氧化物分解组成的统一的硅氧化反应模型。