Development of lateral polarity AlN/GaN heterostructures for nonlinear optical applications

纤锌矿111-氮化物(GaN和AlN)具有自发和应变诱导的压电极化，导致表面结合电荷。现在有可能产生周期性图案化的横向极性结构，其中薄膜的极性的周期性反转将导致极化结合电荷的变化，从而导致电场的变化。这些极表面的界面性质对于光电子学和高频器件结构至关重要。我们建议对极性图案化结构的界面形成进行全面的研究，这将导致利用亚周期结构的GaN、AlN和AlGaN实现非线性光频率转换，从而建立这种器件的功能。这项研究将为理解图案化的极性结构和表面的生长动力学和性质奠定基础。由于极性表面的钝化对内场至关重要，因此我们也将重点关注极性图案化结构上的介质层。我们开发了一个全面的合作项目，结合了两家领先研究机构的大量专业知识。

The wurtzite 111-Nitrides (GaN and AlN) have both a spontaneous and a strain-induced piezoelectric polarization that result in a surface bound charge. It is now possible to produce periodically patterned lateral polarity structures where the periodic reversal of the polarity of the film will cause a variation in the polarization bound charge and thus the electric field. The interface properties of these polar surfaces are critical for optoelectronic and high frequency device structures. We propose a comprehensive study of interface formation of polarity patterned structures which should result in the demonstration of nonlinear light frequency conversion using sub-¿m periodically structured GaN, AlN and AlGaN, thus establishing the functionality of such devices. This research will establish the background for understanding of the growth dynamics and properties of patterned polar structures and surfaces. Because passivation of the polar surfaces is critical to the internal fields, we will also focus on dielectric layers on the polarity patterned structures. We have developed a comprehensive collaborative program that combines the substantial expertise of two leading research institutions.