Development of lateral polarity AlN/GaN heterostructures for nonlinear optical applications

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The wurtzite 111-Nitrides (GaN and AlN) have both a spontaneous and a strain-induced piezoelectric polarization that result in a surface bound charge. It is now possible to produce periodically patterned lateral polarity structures where the periodic reversal of the polarity of the film will cause a variation in the polarization bound charge and thus the electric field. The interface properties of these polar surfaces are critical for optoelectronic and high frequency device structures. We propose a comprehensive study of interface formation of polarity patterned structures which should result in the demonstration of nonlinear light frequency conversion using sub-¿m periodically structured GaN, AlN and AlGaN, thus establishing the functionality of such devices. This research will establish the background for understanding of the growth dynamics and properties of patterned polar structures and surfaces. Because passivation of the polar surfaces is critical to the internal fields, we will also focus on dielectric layers on the polarity patterned structures. We have developed a comprehensive collaborative program that combines the substantial expertise of two leading research institutions.