Long wavelength GaInNAs Quantum Wells and Quantum Dots for GaAs based lasers up to 1.6 µm

该提案的主要目标是开发用于GaAs上长波长连续波激光操作的新型增益材料。在过去的几年中，GaInNAs材料系统允许开发1.3 μ m的高质量垂直表面发射器和边缘发射器，以及1.5 μ m范围内的激光器的首次实现。为了将波长限制推到1.6 μ m以上，以完全覆盖第二电信窗口，必须满足严峻的材料挑战。这些结构需要添加高浓度的氮或在三元或四元量子威尔斯阱中引入GaInNAs量子点。在这两种情况下，低温生长条件，最大限度地减少非辐射复合率必须开发。主要重点将是优化适用于实现发射波长为1.55 μ m的垂直腔面发射激光器（VCSEL）和1.6 μ m的脊波导激光器的活性材料。基本的材料参数（例如在GaInNAs/- GaAs异质结的带偏移）和高氮浓度层的结构特性将与E组合作研究。Umbach将用于系统的材料和器件优化。对C.伯克利的Chang-Hasnain，将生长1.3微米VCSEL层。

The main goal of the proposal is to develop novel gain materials for long wavelength continuous wave laser operation on GaAs. During the last few years the GaInNAs material system has permitted to develop high quality vertical surface emitters and edge emitters at 1.3 ¿m as well as the first realization of lasers in the 1.5 ¿m range. In order to push the wavelength limit to 1.6 ¿m and beyond to fully cover the second telecom window severe material challenges have to be met. These structures require either the addition of high concentrations of nitrogen or the introduction of GaInNAs quantum dots in ternary or quaternary quantum wells. In both cases low temperature growth conditions minimizing the nonradiative recombination rate have to be developed. The main focus will be on the optimization of active materials suitable for the realization of a vertical cavity surface emitting laser (VCSEL) with an emission wavelength of 1.55 ¿m and ridge waveguide lasers at 1.6 ¿m. Fundamental material parameters (e.g. band offsets in GaInNAs/- GaAs heterostructures) and structural properties of layers with high nitrogen concentration will be investigated in cooperation with the group of E. Umbach and will be used for a systematic material and device optimization. For studies of injection locking in the group of C. Chang-Hasnain at Berkeley, 1.3 ¿m VCSEL layers will be grown.