Transport and magnetism in GaMnN nanowires

伯克利大学杨培东小组最近在生产薄GaMnN线的能力方面的发展，为研究一维系统中半导体铁磁性的本质提供了一个独特的机会，这是一个目前热门的问题，因为自旋电子学技术中的信息传输将通过接近一维极限的线进行。因此，我们将从输运和磁的角度出发，对GaMnN导线进行基本表征。对于传输特性，将使用高分辨率光刻技术将触点塑造到单线上，并测量磁电阻和传输各向异性特性。同时，SQUID将对导线阵列进行直接磁性测量，以确定磁性和输运性质之间的相关性。最终，这两种方法将被合并，纳米霍尔棒将被用作探针来测量单根GaMnN线的磁性。

The recent development of the capability to produce thin GaMnN wires in the Peidong Yang group at Berkeley offers a unique opportunity to study the nature of semiconductor ferromagnetism in one dimensional systems, an issue which is currently topical as the transportation of information in a spintronics based technology will occur via wires that will approach the 1D limit. We will therefore embark on fundamental characterization of GaMnN wires from both a transport and magnetic point of view. For transport characterization, high resolution lithographic techniques will be used to fashion contacts onto a single wire and measure the magnetoresistance and transport anisotropy properties. In parallel, direct magnetic measurements will be performed by SQUID on array of wires to determine the correlations between magnetic and transport properties. Ultimately, the two approaches will be merged, as nano-patterned Hall bars will be used as probes to measure the magnetic properties of a single GaMnN wire.