Artificial atoms from magnetic semiconductors

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This research project proposes to study magnetic and spin phenomena in the quantum limit of tunneling transport. The approach to be used consists of an MBE grown vertical tunneling heterostructure based on II-VI dilute magnetic semiconductors (DMS), which is patterned using nanolithography down to a size where single electron quantum effects govern the transport, and fitted with an electrostatic gate providing for electric field control of the tunneling process. This architecture will fulfill three important roles. First, it will perform the function of a three terminal spin transistor allowing for filtering of either spin species as selected by the gate settings. Second, it will serve as an ideal test bed for fundamental investigations of quantum spin-transport, a proper understanding of which is essential for progressing along the road towards quantum information processing and quantum computing. Third, it will yield a novel research paradigm for optical control of electron spin or information imprint between a photon and an electron, which can provide a new scheme of quantum information technology