Artificial atoms from magnetic semiconductors

这项研究计划研究隧道输运量子极限中的磁和自旋现象。所使用的方法包括基于II-VI稀磁半导体(DMS)的分子束外延生长的垂直隧道异质结构，该异质结构使用纳米光刻技术进行图案化，直到单电子量子效应控制输运的尺寸，并配备了提供隧道过程的电场控制的静电门。该架构将扮演三个重要角色。首先，它将执行三端自旋晶体管的功能，允许根据栅极设置选择过滤任一自旋物种。其次，它将成为量子自旋输运基础研究的理想试验台，对量子自旋输运的正确理解对于在量子信息处理和量子计算的道路上取得进展至关重要。第三，它将为光子与电子之间的电子自旋或信息印迹的光学控制提供一种新的研究范式，为量子信息技术提供新的方案

This research project proposes to study magnetic and spin phenomena in the quantum limit of tunneling transport. The approach to be used consists of an MBE grown vertical tunneling heterostructure based on II-VI dilute magnetic semiconductors (DMS), which is patterned using nanolithography down to a size where single electron quantum effects govern the transport, and fitted with an electrostatic gate providing for electric field control of the tunneling process. This architecture will fulfill three important roles. First, it will perform the function of a three terminal spin transistor allowing for filtering of either spin species as selected by the gate settings. Second, it will serve as an ideal test bed for fundamental investigations of quantum spin-transport, a proper understanding of which is essential for progressing along the road towards quantum information processing and quantum computing. Third, it will yield a novel research paradigm for optical control of electron spin or information imprint between a photon and an electron, which can provide a new scheme of quantum information technology