２次元半導体ＭｏＳ２トランジスタにおける界面特性の理解と制御

对二维材料FET的工作模式和界面的理解是非常重要的。基于部分顶栅MoS2场效应管，建立了累加模式场效应管模型。通过电容测量，验证并阐明了累加型场效应管的工作机理。观察到耗尽电容-量子电容的转变。提出了二维场效应管的通用厚度缩放规律，为今后二维材料的研究提供了指导。系统地研究了二硫化钼的界面性质。在导带侧，界面状态主要由表面应变和衬底粗糙度引起的Mo-S键弯曲引起。在价带侧，界面态主要来自于硫空位诱导的缺陷态。

The understanding of operation mode as well as interface are important for 2D materials based FET. An accumulation-mode FET model is developed based on a partial top-gate MoS2 FET.The operation mechanism of an accumulation-mode FET is validated and clarified by the capacitance measurement. A depletion capacitance－quantum capacitance transition is observed. The universal thickness scaling rule of 2D-FETs is then proposed, which provides guidance for future research on 2D materials.The interface properties of MoS2 is systematically investigated. For conduction band side, interface states are mainly attributed to Mo-S bond bending caused by the surface strain and the substrate roughness. For valance band side, the interface states mainly come from the sulfur vacancy induced defect-states.