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反強磁性体材料を基軸とした超高密度不揮発メモリデバイスの開拓

开发基于反铁磁材料的超高密度非易失性存储器件

基本信息

批准号：
21K18189
负责人：
斉藤好昭
金额：
$ 16.56万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Challenging Research (Pioneering)
财政年份：
2021
资助国家：
日本
起止时间：
2021-07-09 至 2026-03-31
项目状态：
未结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21K18189/
关键词：
反強磁性スピントロニクススピン軌道トルク磁気抵抗効果

项目摘要

本研究の目的は、本質的に微細化限界が生じない『反強磁性体を用いた超高密度メモリデバイス』の動作原理を実証し、超大容量・超高速性・低消費電力性を有する次世代メモリデバイスを開拓することにある。令和4年度は、書込み用電極として昨年度提案したSynthetic反強磁性構造の探索を深耕するとともに、大きな読み出し信号が得られる反強磁性体の探索も進めた。また、昨年度に改造した超高真空スパッタ装置を用い、書込み用電極として有望なバルク反強磁性体RuO2の作製に取り組んだ。以下に得られた知見を示す。（１）昨年度提案したCo/Pt/Ir/Pt/Co系Synthetic反強磁性書込み用電極(Phys. Rev. B 105, 054421 (2022))のSOT書込み効率の更なる向上を目指し、PtをPt-Cu合金に変えたSynthetic反強磁性書込み用電極を作製し、SOT書込み効率の評価を行った。その結果、Co間の層間の相互作用がほぼ等しい試料で比較すると、PtリッチのPt-Cu合金Synthetic反強磁性書込み電極において、SOT書込み効率が向上できることが明らかとなった。（２）昨年度見出したCo/Pt/Ir/Pt/Co系Synthetic反強磁性書込み用電極上に、IrMn/MgO/PtからなるTAMR接合読出し用素子を作製し、Synthetic反強磁性書込み用電極のCo層とIrMn層との界面に働く磁気的交換結合について調べた。その結果、IrMnの膜厚を4nm以上にすると、Co層の膜面垂直方向に、一方向磁気異方性が付与できることを見出した。（３）バルク反強磁性書込み用電極の候補とし、スピンスプリッター効果を有する反強磁性体RuO2を選択し、その作製に取り組んだ。その結果、熱酸化Si基板上に(111)配向したRuO2の作製に成功した。

In this study, the purpose and the purpose of this study is to achieve the purpose of this study. The purpose of this study is to achieve the purpose of this study, the purpose of this study is to achieve the purpose of this study, the purpose and the purpose of this study is to achieve the purpose of this study, the purpose and the purpose of this study is to achieve the purpose of this study, the purpose of this study is to achieve the purpose of this study, the purpose of this study is to achieve the purpose of this study, the purpose and the purpose of this study is to achieve the purpose of this study, the purpose of this study is to achieve the purpose of this study, the purpose and the purpose of this study is to achieve the purpose of this study. In 2004, the use of electric power was proposed in 2004. Last year, the proposal of Synthetic anti-magnetic engineering was proposed. The exploration of anti-strong magnetic materials was deeply ploughed. It is expected that the retrofit of ultra-high vacuum equipment and electrical equipment in the year of last year will lead to the use of anti-strong magnets such as RuO2. The following is an indication of your comments. (1) it was proposed last year that Co/Pt/Ir/Pt/Co system Synthetic reverse-strength magnetic alloy electrodes (Phys. Rev. B 105, 054421 (2022). The temperature response rate of SOT is higher than that of Pt-Cu alloy. The reverse magnetic strength of Synthetic is tested by electrodes, and that of SOT is higher than that of Pt alloy. The results of the test, the interaction between Co and other materials such as Synthetic, Pt, Synthetic, SOT, and so on, show that the temperature of the alloy is higher than that of the alloy. (2) Last year, the electrodes of the Co/Pt/Ir/Pt/Co series Synthetic reverse magnetic devices, the IrMn/MgO/Pt devices, the TAMR joints, the Co devices, the IrMn devices, the interface magnets, the Co devices, the interface magnets, the magnets, the electrodes, the interface, the magnets, the electrodes, the electrodes. The results show that the film thickness of IrMn is higher than that of 4nm, the perpendicular direction of the film surface of Co is perpendicular to the direction of the film, and the magnetic property of one direction is different from that of the film. (3) the reverse magnetic field is used as a candidate for the use of the cathode, and the RuO2 is used to select the magnetic material. The results showed that the orientation of RuO2 on acidified Si substrate was successful.