Optisch gepumpte blau-violette Halbleiterscheibenlaser auf der Basis von GaN

基于 GaN 的光泵浦蓝紫半导体盘激光器

• 批准号: 55027184
• 负责人: Dr. Uwe Brauch
• 金额: --
• 依托单位: Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2007
• 资助国家: 德国
• 起止时间: 2006-12-31 至 2010-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/55027184?language=en
• 关键词: Optisch; gepumpte; blau; violette; Halbleiterscheibenlaser

Optically pumped semiconductor disk lasers (SCDL) with external resonator allow the scaling of laser sources to higher output power levels with diffraction limited beam quality. This idea has already been successfully demonstrated in the infrared spectral range based on gallium-arsenide materials. The goal is to transfer these basic ideas to the new but also very challenging GaN material system in order to realize first SCDL emitting in the blue-violet wavelength region. The near term goals are to demonstrate pulsed operation of an InGaN quantum well SCDL at 400 nm. The long term target is the realization of a fully semiconductor based system, utilizing GaN high power laser diodes as a pumping source, that allows continuous wave (cw) operation in the blue spectral region (> 420 nm) and to possibly realize efficient frequency-doubled SCDL in the far UV (200-250 nm).

具有外谐振腔的光泵浦半导体盘状激光器（SCDL）允许将激光源缩放到具有衍射限制光束质量的更高输出功率水平。这种想法已经在基于砷化镓材料的红外光谱范围内得到了成功的证明。我们的目标是将这些基本想法转移到新的但也非常具有挑战性的GaN材料系统中，以便实现在蓝紫波长区域中的第一个SCDL发射。近期的目标是展示InGaN量子阱SCDL在400 nm处的脉冲操作。长期目标是实现完全基于半导体的系统，利用GaN高功率激光二极管作为泵浦源，其允许在蓝色光谱区域（> 420 nm）中的连续波（cw）操作，并且可能在远UV（200-250 nm）中实现有效的倍频SCDL。