Optisch gepumpte blau-violette Halbleiterscheibenlaser auf der Basis von GaN

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Optically pumped semiconductor disk lasers (SCDL) with external resonator allow the scaling of laser sources to higher output power levels with diffraction limited beam quality. This idea has already been successfully demonstrated in the infrared spectral range based on gallium-arsenide materials. The goal is to transfer these basic ideas to the new but also very challenging GaN material system in order to realize first SCDL emitting in the blue-violet wavelength region. The near term goals are to demonstrate pulsed operation of an InGaN quantum well SCDL at 400 nm. The long term target is the realization of a fully semiconductor based system, utilizing GaN high power laser diodes as a pumping source, that allows continuous wave (cw) operation in the blue spectral region (> 420 nm) and to possibly realize efficient frequency-doubled SCDL in the far UV (200-250 nm).