Mapping spin accumulation in lateral spin momentum transfer devices using Brillouin light scattering microscopy

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Spin momentum transfer effects are a hot topic in contemporary magnetism. They take advantage from the fact, that the electron carries a magnetic moment in addition to the charge. Thus, a current of spin polarized electrons can transfer angular momentum, for instance between two magnetic layers in a layered structure or between two objects in a lateral device. Many new applications can be envisioned, ranging from new magnetic random access memory with ultra-small feature sizes to new microwave generators [see e.g. Der07, Wat06, Zut07]. Most investigated geometries used so far have been vertical device geometries, i.e. fabricated from a multilayer using patterning techniques with vertical direction of the spin current flow. The very recent developments encompass lateral spin transfer devices, where spin polarized electrons transfer angular momentum between nano-fabricated magnetic objects positioned laterally next to each other on a substrate. The Japanese partner, Prof. Yoshichika Otani, is one of the world-leading scientists in this field [Kim07a-b,Kim06a-b,Kim05a-b,Ham05a-c].