Structural analysis of interface reactions in thin films by photoelectron diffraction

为了研究外延膜界面的化学反应和结构，利用光电子衍射进行了结构分析。薄膜界面反应的研究由于本研究的第一目标Al/SiO_2体系在其界面反应中生长无有序结构，采用x射线光电子衍射（XPED）研究了Ge(lll)-c（2*8）表面非配位畴Cu层的结构。结果表明，Cu在外延初期在非配位畴中形成双层结构，最外层Cu层发生0.6 *弛豫。b. CaF_2/Ge（lll）体系的界面结构（界面结构和缺陷体系的更多合金形成）采用扫描角和/或能量光电子衍射研究了Ge(lll)-c（2*8）表面CaF_2层的结构。利用同步辐射对缺陷层（金属Ca层和/或氧化物CaO层）进行了结构分析2。多元素薄膜MBE系统的仪器仪表通过在XPED-MBE系统上配置新型Knudsen电池，构建了多元素薄膜MBE系统。这也导致通过MBE制备出定义良好的衬底表面和更好地控制外延生长。利用该系统，研究了SrF_2/Ge（lll）、CaF_2/Ge（lll）等不同薄膜的结构和生长方式。为了准确、实时地研究界面反应，传统的逐图XPED测量方法是不够的。为此，对二维同时检测极角和能量分布进行了理论和实验研究。对新型高通放输入透镜系统进行了理论设计。少

To investigate the chemical reactions and structures at interfaces of epitaxial films, structure analysis using photoelectron diffraction has been carried out.1.Study on the Interface reactions of thin filmsBecause it had been turned out that Al/SiO_2 system, which is the first aim of this study, grows without order structure in its interface reaction, the interface reactions and structures of the following interface systems were studied.a.Interface structure of Cu/Ge(lll) systems (Interface structure and alloy formation of discommensurate system)The structure of discommensurate domain Cu Layer on Ge(lll)-c(2*8) surface was studied by X-ray Photoelectron Diffraction (XPED). It turned out that Cu forms the double layer structure in the discommensurate domain at the initial stage of epitaxy and 0.6 * relaxation of outermost Cu layer occurs. Alloy formation in the interface between Cu an Ge layers was also investigate.b.Interface structure of CaF_2/Ge(lll) systems (Interface structure and … More alloy formation of defected system)The structure of CaF_2 Layer on Ge(lll)-c(2*8) surface was studied by scanned angle and/or energy photoelectron diffraction. Using a synchrotron radiation, structural analysis of defected layers, metal Ca layers and/or oxide CaO layer, was also carried out2.Instrumentation of MBE system for multi elemental thin filmsThe MBE system for multi elemental thin films was constructed by equipping our XPED-MBE system with a new Knudsen cell. This also leads to the preparation of well defined substrate surface by MBE and better controlled epitaxial growth.Using this system, structures and growth mode of various thin films, SrF_2/Ge(lll) and CaF_2/Ge(lll) and so on, were investigated.3.Design and Instrumentation of real time XPED system for measurements of interface reactionTo investigate interface reactions precisely and real time, conventional plot-by-plot XPED measurements is not adequate. Thus, theoretical and experimental study on 2 dimensional simultaneous detection of the polar angle and energy distributions was performed. Theoretical design of new type input lens system with a high through put was also carried out. Less