Structural analysis of interface reactions in thin films by photoelectron diffraction

为了研究外延膜界面的化学反应和结构，我们进行了光电子衍射结构分析。1.薄膜界面反应的研究由于本研究的第一个目标Al/SiO_2系统在其界面反应中是无序生长的，研究了以下界面体系的界面反应和结构：a. Cu/Ge（III）体系的界面结构用X-射线衍射研究了Ge（111）-c（2 × 8）表面上的非公度畴Cu层的结构。射线光电子衍射（XPED）。结果表明，在外延的初始阶段，Cu在非公度畴中形成双层结构，并且最外层Cu层发生0.6 * 弛豫。B. CaF_2/Ge（III）系统的界面结构（界面结构和界面扩散） 关于我们 用扫描角和/或能量光电子衍射研究了Ge（111）-c（2 × 8）表面CaF_2层的结构。2.多元薄膜分子束外延系统的仪器化在我们的XPED-MBE系统上安装了一个新的Knudsen池，建立了多元薄膜分子束外延系统。利用该系统研究了SrF_2/Ge（III）、CaF_2/Ge（III）等多种薄膜的结构和生长模式。3.用于测量界面反应的真实的时间XPED系统的设计和装置为了精确和真实的时间地研究界面反应，传统的逐图XPED测量是不够的。为此，本文对极角和能量分布的二维同时探测进行了理论和实验研究。并对新型高通量输入透镜系统进行了理论设计。少

To investigate the chemical reactions and structures at interfaces of epitaxial films, structure analysis using photoelectron diffraction has been carried out.1.Study on the Interface reactions of thin filmsBecause it had been turned out that Al/SiO_2 system, which is the first aim of this study, grows without order structure in its interface reaction, the interface reactions and structures of the following interface systems were studied.a.Interface structure of Cu/Ge(lll) systems (Interface structure and alloy formation of discommensurate system)The structure of discommensurate domain Cu Layer on Ge(lll)-c(2*8) surface was studied by X-ray Photoelectron Diffraction (XPED). It turned out that Cu forms the double layer structure in the discommensurate domain at the initial stage of epitaxy and 0.6 * relaxation of outermost Cu layer occurs. Alloy formation in the interface between Cu an Ge layers was also investigate.b.Interface structure of CaF_2/Ge(lll) systems (Interface structure and … More alloy formation of defected system)The structure of CaF_2 Layer on Ge(lll)-c(2*8) surface was studied by scanned angle and/or energy photoelectron diffraction. Using a synchrotron radiation, structural analysis of defected layers, metal Ca layers and/or oxide CaO layer, was also carried out2.Instrumentation of MBE system for multi elemental thin filmsThe MBE system for multi elemental thin films was constructed by equipping our XPED-MBE system with a new Knudsen cell. This also leads to the preparation of well defined substrate surface by MBE and better controlled epitaxial growth.Using this system, structures and growth mode of various thin films, SrF_2/Ge(lll) and CaF_2/Ge(lll) and so on, were investigated.3.Design and Instrumentation of real time XPED system for measurements of interface reactionTo investigate interface reactions precisely and real time, conventional plot-by-plot XPED measurements is not adequate. Thus, theoretical and experimental study on 2 dimensional simultaneous detection of the polar angle and energy distributions was performed. Theoretical design of new type input lens system with a high through put was also carried out. Less