Structural analysis of interface reactions in thin films by photoelectron diffraction

通过光电子衍射对薄膜界面反应进行结构分析

• 批准号: 09650886
• 负责人: ISHII Hideshi
• 金额: $ 2.18万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650886/
• 关键词: Pjotoelectron Diffraction; Interface of Thin Films; Chemical State; Oxide Thin Films; Structure Analysis; Sychrotorn Radiation; Epitaxial Films; Growth of Films; 光電子回析; 金属; 絶縁体 界面; 酸化物

To investigate the chemical reactions and structures at interfaces of epitaxial films, structure analysis using photoelectron diffraction has been carried out.1.Study on the Interface reactions of thin filmsBecause it had been turned out that Al/SiO_2 system, which is the first aim of this study, grows without order structure in its interface reaction, the interface reactions and structures of the following interface systems were studied.a.Interface structure of Cu/Ge(lll) systems (Interface structure and alloy formation of discommensurate system)The structure of discommensurate domain Cu Layer on Ge(lll)-c(2*8) surface was studied by X-ray Photoelectron Diffraction (XPED). It turned out that Cu forms the double layer structure in the discommensurate domain at the initial stage of epitaxy and 0.6 * relaxation of outermost Cu layer occurs. Alloy formation in the interface between Cu an Ge layers was also investigate.b.Interface structure of CaF_2/Ge(lll) systems (Interface structure and … More alloy formation of defected system)The structure of CaF_2 Layer on Ge(lll)-c(2*8) surface was studied by scanned angle and/or energy photoelectron diffraction. Using a synchrotron radiation, structural analysis of defected layers, metal Ca layers and/or oxide CaO layer, was also carried out2.Instrumentation of MBE system for multi elemental thin filmsThe MBE system for multi elemental thin films was constructed by equipping our XPED-MBE system with a new Knudsen cell. This also leads to the preparation of well defined substrate surface by MBE and better controlled epitaxial growth.Using this system, structures and growth mode of various thin films, SrF_2/Ge(lll) and CaF_2/Ge(lll) and so on, were investigated.3.Design and Instrumentation of real time XPED system for measurements of interface reactionTo investigate interface reactions precisely and real time, conventional plot-by-plot XPED measurements is not adequate. Thus, theoretical and experimental study on 2 dimensional simultaneous detection of the polar angle and energy distributions was performed. Theoretical design of new type input lens system with a high through put was also carried out. Less

为了研究外延膜界面的化学反应和结构，利用光电子衍射进行了结构分析。1.薄膜界面反应的研究由于本研究的首要目标Al/SiO_2体系在其界面反应中生长无序结构，因此对以下界面体系的界面反应和结构进行了研究。 Cu/Ge(III)体系(不通量体系的界面结构和合金形成)采用X射线光电子衍射(XPED)研究了Ge(III)-c(2*8)表面不通量域Cu层的结构。结果表明，Cu在外延初始阶段在不通径域中形成双层结构，并且最外层Cu层发生0.6*弛豫。还研究了Cu和Ge层之间界面的合金形成。b.CaF_2/Ge(III)体系的界面结构(缺陷体系的界面结构和合金形成)通过扫描角度和/或能量光电子衍射研究了Ge(III)-c(2*8)表面CaF_2层的结构。使用同步辐射，还进行了缺陷层、金属Ca层和/或氧化物CaO层的结构分析2。多元素薄膜MBE系统的仪器化多元素薄膜MBE系统是通过为我们的XPED-MBE系统配备新型努森池而构建的。这也导致通过MBE制备清晰的衬底表面并更好地控制外延生长。利用该系统，对SrF_2/Ge(III)和CaF_2/Ge(III)等各种薄膜的结构和生长模式进行了研究。3.用于界面反应测量的实时XPED系统的设计和仪器为了精确、实时地研究界面反应，传统的逐图XPED 测量值不充分。因此，对极角和能量分布的二维同时检测进行了理论和实验研究。并对新型高通量输入透镜系统进行了理论设计。较少的

项目成果

Shinji Omori: "“Disappearance of Element-Specific Kikuchi Bands from Fluoride Surfaces"" Journal of Vacuum Science and Technology. (in press). (1999)

Shinji Omori：“氟化物表面元素特异性菊池带的消失”，真空科学与技术杂志（1999 年出版）。

Hideshi ISHII: "Surface Structure of Thin CaO Layers Formed on CaF_2(III)studied by Photoelectron Diffraction" J.Electron Spectrosc.Relat.Phenom.88-91. 545-549 (1998)

Hideshi ISHII：“通过光电子衍射研究 CaF_2(III) 上形成的薄 CaO 层的表面结构”J.Electron Spectrosc.Relat.Phenom.88-91。

Susumu SHIRAKI et al.: "Measurements of Auger electron diffraction by using a novel electrostatic analyzer with the simultaneous detetection of energy and angular distribution (in Japanese)" Hyomen-Kagakaishi. (in press, ). (1999)

Susumu SHIRAKI 等人：“使用新型静电分析仪测量俄歇电子衍射，同时检测能量和角度分布（日语）”Hyomen-Kagakaishi。

Shinji OMORI: "Reconstruction of the crystal structure by Kikuchi-band analysis in X-ray p〓 and Auger electron diffraction" J.Electron Spectrosc.Relat.Phenom.88-91. 517-〓2 (1998)

Shinji OMORI：“通过 X 射线 p〓 和俄歇电子衍射中的菊池带分析重建晶体结构”J.Electron Spectrosc.Relat.Phenom.88-91 (1998)。

Susumu SHIRAKI et al.: "Design of Input Lens System for a 180ﾟ Deflection Toroidal Analyzer using Trajectory Simulation" J.Electron Spectrosc.Relat.Phenom.88-91. 1021-1026 (1998)

Susumu SHIRAKI 等人：“使用轨迹模拟设计 180° 偏转环形分析仪的输入透镜系统”J.Electron Spectrosc.Relat.Phenom.88-91 (1998)。