Evaluation of ferroelectric Domain Structures on Bulk and Surface in Lead Zirconate Titanate Ceramics

（1）铁电域结构的静态评价（1）最小平面耦合因子（kp）在Coercive fields （Ec）的情况下，硬软铅钛（PZT）、铅钛（PT）和钡钛（BT）陶瓷。The 180 ° domain clamping occurred at the Ec。（2）最小非线性常数（εr）和最大频率常数（fcp）主要在Ec中观察到的情况下，在硬四重奏PZT、软PZT、PT和BT陶瓷。在另一只手上，这些在硬rhombohedarl PZT陶瓷的情况下并不被观察。（3）“poling field dependence of εr could be explained by the domain switch and rotation”。（2）铁电结构域结构的动态评估（1）从脉冲周期的依赖性（Pr）中得到Pr分解，得到了脉冲周期的增量。进一步增加了一个周期，而Pr增加了一个周期的增加。我们称之为前瞬态现象发生在电域裂缝中的降解。（2）双极脉冲轮询被不对称P-E歇斯底里循环证实。P-E环路的转换方向是由双极脉冲的组合决定的。（3）它找到了一个空间电荷场，当应用脉冲和磁场的方向是固定的脉冲周期的独立方向。从两种评估中，它可以澄清铁电陶瓷中的聚合场和脉冲响应对域结构的依赖，如PZT、PT和BT陶瓷。我们相信，获得的数据已被用于开发铁电随机存取存储器（FRAM）、域控制的铁电陶瓷设备和压电陶瓷设备，已应用于高功率用途。

(1) Statical evaluation of ferroelectric domain structures(1) The minimum planar coupling factors (kp) were obtained at the coercive fields (Ec) in case of hard and soft lead zirconate titanate (PZT), lead titanate (PT) and barium titanate (BT) ceramics. The 180゜ domain clamping occurred at the Ec.(2) The minimum dielectric constant (εr) and maximum frequency constant (fcp) were mainly observed at Ec in case of hard tetragonal PZT, soft PZT, PT and BT ceramics. On the other hand, these were not observed in case of hard rhombohedarl PZT ceramics.(3) The poling field dependence of εr could be explained by the domain switching and rotation.(2) Dynamical evaluation of ferroelectric domain structures(1) From the pulse cycle dependence of the remanent polarization (Pr), the Pr decreased with the increase of the pulse cycle. Further increasing the cycle, the Pr increased with the increase of the cycle. We call the decrease in Pr transient phenomena due to the electrical domain clamping.(2) The bipolar pulse poling was confirmed by the asymmetry P-E hysteresis loops. The shifted direction of P-E loops was determined by the combination of the bipolar pulses.(3) It was found that a space charge field was generated while applying pulse and the direction of the field was fixed independent of the pulse cycle.From both the evaluations, it could be clarified the poling field and pulse response dependence of domain structures in ferroelectric ceramics such as PZT, PT and BT ceramics. We believe the data obtained were useful to develop ferroelectric random access memory (FRAM), domain-controlled ferroelectric ceramic devices and piezoelectric ceramic devices applied to high power use.