Evaluation of ferroelectric Domain Structures on Bulk and Surface in Lead Zirconate Titanate Ceramics
锆钛酸铅陶瓷体和表面铁电畴结构的评价
基本信息
- 批准号:09650370
- 负责人:
- 金额:$ 1.02万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:1997
- 资助国家:日本
- 起止时间:1997 至 1999
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
(1) Statical evaluation of ferroelectric domain structures(1) The minimum planar coupling factors (kp) were obtained at the coercive fields (Ec) in case of hard and soft lead zirconate titanate (PZT), lead titanate (PT) and barium titanate (BT) ceramics. The 180゜ domain clamping occurred at the Ec.(2) The minimum dielectric constant (εr) and maximum frequency constant (fcp) were mainly observed at Ec in case of hard tetragonal PZT, soft PZT, PT and BT ceramics. On the other hand, these were not observed in case of hard rhombohedarl PZT ceramics.(3) The poling field dependence of εr could be explained by the domain switching and rotation.(2) Dynamical evaluation of ferroelectric domain structures(1) From the pulse cycle dependence of the remanent polarization (Pr), the Pr decreased with the increase of the pulse cycle. Further increasing the cycle, the Pr increased with the increase of the cycle. We call the decrease in Pr transient phenomena due to the electrical domain clamping.(2) The bipolar pulse poling was confirmed by the asymmetry P-E hysteresis loops. The shifted direction of P-E loops was determined by the combination of the bipolar pulses.(3) It was found that a space charge field was generated while applying pulse and the direction of the field was fixed independent of the pulse cycle.From both the evaluations, it could be clarified the poling field and pulse response dependence of domain structures in ferroelectric ceramics such as PZT, PT and BT ceramics. We believe the data obtained were useful to develop ferroelectric random access memory (FRAM), domain-controlled ferroelectric ceramic devices and piezoelectric ceramic devices applied to high power use.
(1)铁电畴结构的静态评估(1)对于软硬的锆钛酸铅(PZT)、钛酸铅(PT)和钛酸钡(BT)陶瓷,在矫顽场(EC)下得到了最小的平面耦合因子(Kp)。(2)硬四方PZT、软PZT、PT和BT陶瓷的最小介电常数(εr)和最大频率常数(Fcp)主要出现在EC处。(3)εr对极化强度的依赖关系可以用磁畴的转换和旋转来解释。(2)铁电畴结构的动态评估(1)从剩余极化(Pr)对脉冲周期的依赖关系来看,Pr随脉冲周期的增加而减小。进一步增加循环次数,Pr随循环次数的增加而增加。我们称之为电畴钳制导致的Pr的下降。(2)双极脉冲极化被不对称的P-E磁滞回线所证实。研究发现,在施加脉冲的同时,会产生一个空间电荷场,且空间电荷场的方向与脉冲周期无关,从这两个方面可以清楚地了解PZT、PT和BT等铁电陶瓷中铁电畴结构的极化电场和脉冲响应关系。我们相信,所获得的数据将对铁电随机存取存储器(FRAM)、域控铁电陶瓷器件和应用于高功率应用的压电陶瓷器件的开发有一定的参考价值。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Ogawa and K.Nakamura: "Effect of Domain Switching and Rotation on Dielectric and Piezoelectric Properties in Lead Zirconate Titanate Ceramics"Jpn.J.Appl.Phys.. 38-9B. 5465-5469 (1999)
T.Okawa 和 K.Nakamura:“畴切换和旋转对锆钛酸铅陶瓷介电和压电性能的影响”Jpn.J.Appl.Phys. 38-9B。
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T.Ogawa and K.Nakamura: "Poling Field Dependence of Ferroelectric Properties and Crystal Orientation in Rhombohedral Lead Zirconate Titanate Ceramics"Jpn. J. Appl. Phys.. 37. 5241-5245 (1998)
T.Okawa 和 K.Nakamura:“菱形锆钛酸铅陶瓷中铁电特性和晶体取向的极化场依赖性”Jpn。
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T.Ogawa: "Domain Structure of Ferroelectric Ceramics" Proc.of the 9the CIMTEC(International Conference on Modern Materials & Technologies '98). 印刷中. (1998)
T. Okawa:“铁电陶瓷的域结构”,第 9 届 CIMTEC(现代材料与技术国际会议 98)出版(1998 年)。
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中村幸司.小川敏夫: "PZTセラミックス中での強誘電体ドメインの動的評価" 静岡理工科大学紀要. 7印刷中. (1998)
Koji Nakamura 和 Toshio Okawa:“PZT 陶瓷中铁电域的动态评估”静冈科学技术研究所公报 7 版(1998 年)。
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T.Ogawa and A.Yamada: "Ferroelectric Properties and Crystal Orientation in Rhombohedral PZT Ceramics" Proc.of the 8th US-Japan Seminar on Dielectric and Pie30electric Ceramics. 268-271 (1997)
T.Okawa 和 A.Yamada:“菱形 PZT 陶瓷中的铁电性质和晶体取向”第八届美日介电和 Pie30 电陶瓷研讨会的会议记录。
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OGAWA Toshio其他文献
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