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Basic Research on the Continuous Film Formation by Using Discharge Micro-Sputtering

放电微溅射连续成膜的基础研究

基本信息

批准号：
09650798
负责人：
NAKAYAMA Toshio
金额：
$ 1.86万
依托单位：
Science University of Tokyo in YAMAGUCHI
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

项目摘要

Using the micro sputtering technique, continuous thin film formation was carried out by the movement of the substrate put in vacuum vessel along straight line. In the thin film formation, slide glass (38×12mm) is used the substrate, and negative electrode target 99.99% purity silver (Ag), and it was carried out as an experimental condition under equilibrious argon gas pressure 3×10-2Pa, impressed voltage 1.3kV, discharge current 5mA, the experiment was done during 2 minutes for one time. When the size of the duct equipped the negative electrode did it with 1.5×3mm and 0.5×3mm, it was that the each l.5mm substrate respectively moved, and it was possible to form the thin silver film of 1.5X20mm and 0,5X17m for formation time in the 30 minutes, The longitudinal film thickness distribution was almost uniform 900A. As this result, it was confirmed that a thin film could be formed by continuing, by the movement of the substrate in the straight line. Continuously, the examination of the continuous etching was also carried out for etching mode of the micro sputtering technique. For single crystal silicon substrate, it was possible to describe the etching pattern of the curve in spot sutra of etching size φ100 μm and φ25 μm by the rotation of the substrate using the Ag negative electrode. On the basis of the above-mentioned fact, the equipment which could continuously carry out new etching and sputtering was designed, and it was produced experimentally, and the experiment was carried out. As the result, it was proven that to sputter on etched plane by the traverse of the substrate further was possible. For copper and silver, the linear relation was almost obtained between the vapor deposition film thickness and discharge time.

采用微溅射技术，通过衬底在真空室中沿沿着直线运动，实现连续成膜。薄膜制备中，以38× 12 mm的载玻片为衬底，以纯度为99.99%的银（Ag）为阴极靶，在氩气平衡压力为3×10- 2 Pa，外加电压为1.3kV，放电电流为5 mA的条件下进行，实验时间为2 min，一次完成。当阴极导管尺寸为1.5× 3 mm和0.5× 3 mm时，每1.5mm的基片分别移动一次，在30分钟内可形成1.5 × 20 mm和0.5 × 17 m的薄银膜，纵向膜厚分布基本均匀。作为该结果，确认了通过基板的直线移动而继续可以形成薄膜。接着，对微溅射技术的刻蚀模式进行了连续刻蚀的试验。对于单晶硅衬底，用Ag负电极旋转衬底，可以描述腐蚀尺寸φ100 μm和φ25 μm的点经曲线的腐蚀图形。在此基础上，设计了一种能连续进行新的刻蚀和溅射的设备，并进行了实验制作和实验。其结果是，它被证明是可能的，通过基板的横向进一步在蚀刻平面上溅射。对于铜和银，气相沉积膜厚度与放电时间之间几乎获得线性关系。