The Trial Manufacture of Heat Sink Material Made with Cu-Mo Composite for Semiconductor Chip and A Study on Their Thermophysical Properties

作为半导体领域对散热材料所要求的性能。对于超大规模集成电路和功率晶体管等，重要的是将热膨胀系数近似于半导体芯片和封装材料的热膨胀系数。此外，还需要高导热性。本研究关注了铜（Cu）和钼（Mo）金属复合材料，制备了颗粒混合型（M/CM）和层合型（L/CM）的Cu-Mo复合材料，在这两种类型的复合材料中分别制备了改变Cu和Mo组成比的几个测量试样，并对其热物理性能和力学性能进行了研究。用激光闪蒸法测量了室温~ 800ºC范围内的导热系数、比热系数和导热系数，用推杆式膨胀仪测量了30 ~ 800ºC范围内的热膨胀系数。在室温下测定了拉伸强度、伸长率、杨氏模量、泊松比、埃里克森值和维氏硬度等力学性能。另一方面，对这些热物理和力学性能的理论方程进行了检验，并与实验值进行了比较。结果表明，通过改变Cu和Mo的比例，M/CM和L/CM两种Cu-Mo复合材料的热膨胀系数和导热系数分别控制在5-17X10-6/K和150-390W/(M -K)范围内，可以应用于半导体芯片等的散热材料。

As the property required for heat sink materials in the field of semiconductor. VLSI and power transistor so on, it is important that the thermal expansion coefficient is approximated to that of a semiconductor chip and a package material. In addition, the high thermal conductivity is required.In this study, the authors paid attention to metal composites consisting of copper (Cu) and molybdenum (Mo), and made the Cu-Mo composites of particle mixture type (M/CM) and laminated type (L/CM), In the composites of this two types, several measurement specimens whose the composition ratio of Cu and Mo was changed were prepared, respectively, and their thermophysical and mechanical properties were investigated. A thermal diffusivity, specific heat and thermal conductivity in the thermophysical properties were measured by the laser flash method in the range of room temperature to 800ﾟC and a thermal expansion coefficient was measured with the push-rod dilatometer in the range of 30-800ﾟC.As the mechanical properties, a tensile strength, elongation, Young' s modulus, Poissons ratio, Erichson value and Vickers hardness were mea- sured at room temperature. On the other hand, the theoretical equations for these thermophysical and mechanical properties were examined and compared with the experimental values.As a result, the thermal expansion coefficient and the thermal conductivity of both Cu-Mo composites of M/CM and L/CM were controlled in the range of 5-17X10-6/K and 150-390W/(m-K) by changing the ratio of Cu and Mo, respectively, and it was found that these composites were able to the application of a heat sink material for the semiconductor chip so on.