The Trial Manufacture of Heat Sink Material Made with Cu-Mo Composite for Semiconductor Chip and A Study on Their Thermophysical Properties
半导体芯片用铜钼复合散热材料的试制及热物性研究
基本信息
- 批准号:09650232
- 负责人:
- 金额:$ 1.15万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:1997
- 资助国家:日本
- 起止时间:1997 至 1998
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
As the property required for heat sink materials in the field of semiconductor. VLSI and power transistor so on, it is important that the thermal expansion coefficient is approximated to that of a semiconductor chip and a package material. In addition, the high thermal conductivity is required.In this study, the authors paid attention to metal composites consisting of copper (Cu) and molybdenum (Mo), and made the Cu-Mo composites of particle mixture type (M/CM) and laminated type (L/CM), In the composites of this two types, several measurement specimens whose the composition ratio of Cu and Mo was changed were prepared, respectively, and their thermophysical and mechanical properties were investigated. A thermal diffusivity, specific heat and thermal conductivity in the thermophysical properties were measured by the laser flash method in the range of room temperature to 800゚C and a thermal expansion coefficient was measured with the push-rod dilatometer in the range of 30-800゚C.As the mechanical properties, a tensile strength, elongation, Young' s modulus, Poissons ratio, Erichson value and Vickers hardness were mea- sured at room temperature. On the other hand, the theoretical equations for these thermophysical and mechanical properties were examined and compared with the experimental values.As a result, the thermal expansion coefficient and the thermal conductivity of both Cu-Mo composites of M/CM and L/CM were controlled in the range of 5-17X10-6/K and 150-390W/(m-K) by changing the ratio of Cu and Mo, respectively, and it was found that these composites were able to the application of a heat sink material for the semiconductor chip so on.
作为半导体领域散热材料所需的性能。 VLSI和功率晶体管等,重要的是热膨胀系数接近半导体芯片和封装材料的热膨胀系数。本研究中,作者关注铜(Cu)和钼(Mo)组成的金属复合材料,制作了颗粒混合型(M/CM)和叠层型(L/CM)的Cu-Mo复合材料,在这两种类型的复合材料中,分别制备了几个改变Cu和Mo的成分比的测量试件,并研究了它们的性能。 研究了热物理和机械性能。热物理性能中的热扩散率、比热容和导热系数在室温至800℃范围内采用激光闪光法测量,热膨胀系数在30-800℃范围内采用推杆膨胀仪测量。机械性能方面,拉伸强度、伸长率、杨氏模量、泊松比、埃里克森值和维氏硬度 在室温下测量。另一方面,对这些热物理和力学性能的理论方程进行了检验,并与实验值进行了比较。结果,通过改变Cu和Mo的比例,M/CM和L/CM的Cu-Mo复合材料的热膨胀系数和导热系数分别控制在5-17X10-6/K和150-390W/(m-K)范围内,发现 表明这些复合材料能够应用于半导体芯片的散热材料等。
项目成果
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T.Arikawa, E.Takegoshi Y.hirasawa, T.Igarasi: "An Investigation for the Thermal Properties of Cu-Mo Composites as a Heat Sink Material" Proc.10th International Symposium on Transport Phenomena in Thermal Science and Process Engineering (ISTP-10). Vol.1. 1
T.Arikawa、E.Takegoshi Y.hirasawa、T.Igarasi:“An Investigation for the Thermal Properties of Cu-Mo Composites as a Heat Sink Material” Proc.10th International Symposium on Transport Phenomena in Thermal Science and Process Engineering (ISTP-
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Yoshio HIRASAWA,Eisyun TAKAGOSHI,Tadashi ARIKAWA: "An Investigation on the Thermal Constants of Laminated Cu-Mo Composites for Heat Sink Materials by the Laser Flash Method." Proc.5th Asian Thermophysical Properties Conference (ATPC-5). Vol.1. 61-64 (1998
Yoshio HIRASAWA、Eisyun TAKAGOSHI、Tadashi ARIKAWA:“通过激光闪光法研究散热材料层压铜钼复合材料的热常数。”
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- 影响因子:0
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有川正, 市田晃, 竹越栄俊: "銅-モリブデン系複合材料の機械的特性" 材料. 48巻3号. 295-300 (1999)
Tadashi Arikawa、Akira Ichida、Hidetoshi Takekoshi:“铜钼复合材料的机械性能”,第 48 卷,第 3 期,295-300 (1999)。
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Y.Hirasawa,E.Takegoshi T.Arikawa: "An Investigation on the Thermal Constants of Laminated Cu-Mo Com-posites for Heat Sink Materials by the Laser Flash Method" Proc. of 5th Asian Thermophysical Properties Conference,(ATPC-5), Soeul. Vol.1. 61-64 (1998)
Y.Hirasawa,E.Takegoshi T.Arikawa:“通过激光闪光法研究用于散热材料的层压铜钼复合材料的热常数”Proc。
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- 影响因子:0
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Tadashi ARIKAWA,Akira ICHIDA,Eisyun TAKAGOSHI: "Mechanical Characteristics of Copper-Molybdenum Composites." Journal of Society of Materials Science, Japan. Vol.48-No.3. 295-300 (1999)
Tadashi ARIKAWA、Akira ICIDA、Eisyun TAKAGOSHI:“铜钼复合材料的机械特性”。
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