A Challenge to the limit of Low Growth Temperature of LEP GaAs

LEP GaAs低生长温度极限的挑战

• 批准号: 09650343
• 负责人: NANNICHI yasuo
• 金额: $ 2.18万
• 依托单位: FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650343/
• 关键词: GaAs; Limit of low defect density; Crystal growth; Sulfur treatment; Temp. Difference LPE; 低結晶成長温度; 液相エピタキシイ; 温度差法結晶成長; 低温液相結晶成長; 超低欠陥; 結晶成長; いおう表面処理; 温度差液相成長

IT IS KNOWN THAT T}IE STRUCTURAL DEFECT DENSITY, NAMELY VACAINCIES/INTERSTITIALS DENSITIES, SHOULD BE MINIMAL IN GaAs CRYSTALS GROWN BY LIQUID PHASE EPITAXY AT CERTAIN REGIONS OF Low TEMPERATURE. HOWEVER, No ONE HAS EVER CHALLENGED T'HIS DIFFICULT TASK.HERE WE CHALLENGED. THE KNACK IS TO USE 1) TEMPERATURE DIFFERENCE LIQUID PHASE EPITAXY, IN WHICH THE SOURCE MATERIAL IS KEPT AT A HIGHER TEMPERATURE THAT SUBSTRATE TEMPERATURE, AND 2) To PREPARE 11 A PRESTINE SURPACE BY TREATING WITH POLY=AMMONIUM SULFIDE. THUS TREATED SRFACE WAS EXTENSIVELY STUDIED BY US To BE COVERED WITH A MONO-LAYER OF SLTLFUR, WHTCH KEEPS OXYGEN FROM ADSORBING ON GaAs SURFACE.SO FAR WE OVSERVED GaAs CRYSTALS TO C.ROW AS LOW AS 214℃, THAT IS THE LOWEST CROWTH TEMPERATURE POR GaAs. HOWEVER, THE SIZE OF THE CRYSTAL Is TOO TINY, ON THE ORDER OP A FEW HUNDRED MICRONS. TO MEASURE ITS CHARACTERISTICS. WE BELIEVE UNDER ULTRA HIGH VACUUM CONDITION. THE STZE PROBLEM COULD BE SOLVED.

在一定的低温区，液相外延生长的GaAs晶体中的结构缺陷密度，即空位/间隙密度应是最小的。然而，从来没有人挑战过他的艰巨任务。在这里，我们挑战。KNACK是使用1）温差液相外延，其中源材料保持在比衬底温度更高的温度下，和2）通过用聚硫化铵处理来获得11 A的预处理表面。因此，我们对表面处理进行了深入的研究，在表面上覆盖一层单层薄膜，以防止氧在GaAs表面的吸附。迄今为止，我们将GaAs晶体的生长温度降低到214℃，这是GaAs晶体生长的最低温度。然而，晶体的尺寸太小了，大约几百微米。以测量其特征。我们相信在超高真空条件下。风格的问题可以解决。