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Mechanical Properties of Interconnect Metallic Thin Films

互连金属薄膜的机械性能

基本信息

批准号：
09555207
负责人：
MIZUBAYASHI Hiroshi
金额：
$ 8.32万
依托单位：
University of Tsukuba
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555207/
关键词：
Wiring Ag film Al film Al-Si(Cu) film Ag Pd Multilayer film Nanocrystalline Au Mechanical Properties Electromigration 非晶質合金弾性率表面・界面粒界層金属配線 Al超薄膜 Ag超薄膜結晶粒界層表面・界面層

项目摘要

The ULSI technology has brought about a great demand for understanding and controlling of the mechanical properties as well as electromigration (EM) in thin films. Silver may be a candidate for interconnect materials because of the low electric resistivity and an atomically sharp Ag/Si interface. Young's modulus EィイD2fィエD2 of silver films was measured as a function of film thickness, d, in the thickness range between 6 and 150 nm. EィイD2fィエD2 of silver films shows good agreement with the bulk value for films thicker than 50 nm and a decrease with decreasing film thickness below 50 nm, suggesting that the effective thickness of a grain boundary, tィイD2CBィエD2, is about 1.5 nm in a silver mono-metal film. In contrast, we also found that Ag/Pd multilayer films show the supermodulus effects at around the modulation wave length λ=1.9, 2.8 and 3.7 nm where the activation enthalpy for interdiffusion is anomalously high, suggesting that such Ag/Pd multilayer films may be potential materials for h … More eavy duty wiring. We also pursued the effect of alloy elements on the mechanical properties of Al-Si(Cu). Pure-Al and Al-Si(Cu) films prepared by the vacuum deposition show a decrease in Young's modulus for the film thickness below 10 nm and 20 nm, respectively, suggesting that tィイD2CBィエD2 is about 0.5 nm in pure-Al films and about 1 nm in Al-Si(Cu) films. In other words, the addition of Cu alloy element does not suppress the grain boundary diffusion in Al but work as an inhibitor to the self-diffusion of Al. It is also found that Al-Si(Cu) films prepared by RF-sputtering show the supermodulus effects for d below 20 nm where the interatomic spacing shows a decrease with decreasing d, suggesting that the dense grain boundary is mechanically strong. Matter of the fact, the study on the mechanical properties of nanocrystalline Au indicated that Young's modulus of the grain boundary in the dense nano-Au specimens is similar to the bulk value. On the other hand, the study on the collective motion in amorphous alloys suggests that in a nm-scale wiring, the collective motion of fine crystallites would be excited by the high-frequency EM-force. Less

超大规模集成电路（ULSI）技术的发展对薄膜的力学性能和电迁移（EM）的理解和控制提出了更高的要求。银由于低电阻率和原子级尖锐的Ag/Si界面而可以作为互连材料的候选物。测量银膜的杨氏模量E ε D2 f ε D2作为膜厚度d的函数，厚度范围在6和150 nm之间。银膜的E_xD_2f_xD_2与厚于50 nm的膜的体值显示出良好的一致性，并且随着膜厚度的减小而减小，低于50 nm，这表明在银单金属膜中，晶界的有效厚度t_xD_2CB_xD_2约为1.5 nm。与此相反，我们还发现Ag/Pd多层膜在调制波长λ=1.9、2.8和3.7 nm附近表现出超模量效应，在这些区域内相互扩散的激活焓非常高，这表明这种Ag/Pd多层膜可能是一种有潜力的高分子材料。 ...更多信息重型接线。研究了合金元素对Al-Si（Cu）合金力学性能的影响。通过真空沉积制备的纯Al和Al-Si（Cu）膜分别在膜厚度小于10 nm和20 nm时显示出杨氏模量的降低，表明纯Al膜中的t_（D2）CB_（D2）约为0.5 nm，而Al-Si（Cu）膜中的t_（D2）CB_（D2）约为1 nm。也就是说，Cu合金元素的加入并不抑制Al的晶界扩散，而是抑制了Al的自扩散。研究还发现，当d小于20 nm时，用射频溅射法制备的Al-Si（Cu）薄膜表现出超模量效应，其原子间距随d的减小而减小，表明致密的晶界具有很强的机械强度。事实上，对纳米晶Au力学性能的研究表明，致密纳米Au样品的晶界杨氏模量与体相值相似。另一方面，对非晶合金集体运动的研究表明，在纳米尺度布线中，高频电磁力将激发细晶粒的集体运动。少