Mechanical Properties of Interconnect Metallic Thin Films

ULSI技术提出了一个关于机械性能的巨大需求，以满足和控制在薄膜中的机械性能，如良好的电迁移（EM）。银可能是互连材料的候选人，因为低电电阻和原子上清晰的Ag/Si接口。Young's Modulus E-D2 f-D2 of Silver Films被测量为电影厚度的功能， d，在6和150 nm之间的厚度范围。E-D2f-D2 of Silver films shows good agreement with the bulk value for films thicker than 50 nm and a decreasing film thickness below 50 nm，建议the effective thickness of a grain boundary，t-D2CB-D2， is about 1.5 nm in a silver mono-metal film。在对比下，我们还发现Ag/Pd多层膜显示在调制波长度范围内的超模效应λ=1.9、2.8和3.7纳米的干扰激活界面异常高，建议这样的Ag/Pd多层膜可能是h的潜在材料 ... More 每一个任务都在编织。我们还在Al-Si（Cu）的机械属性上促进了合金元素的影响。用真空沉积物准备的纯Al和Al-Si（Cu）薄膜显示了Young's Modulus的退化，用于10纳米和20纳米以下的薄膜厚度，因此，应考虑到Ty D2CB y D2在纯Al薄膜中约0.5纳米，在Al-Si（Cu）薄膜中约1纳米。在其他术语中，Cu合金元素的添加不能抑制Al中的谷物边界扩散，但作为一种抑制剂对Al的自我扩散，还发现了由RF-Sputtering制作的Al-Si（Cu）电影的超模块效应在20纳米以下的地方显示了间原子间隔显示了分解d，建议密集的谷物边界是机械上强的。事实的重要性，对纳米晶体管Au的机械性质的研究表明，Young在密集纳米-Au specimes中的颗粒边界模块类似于块状值。在另一边，对非对称合金中的集体运动进行研究，认为纳米尺度编织中的集体运动，精细水晶石的集体运动会受到高频EM力量的刺激。Less（低）

The ULSI technology has brought about a great demand for understanding and controlling of the mechanical properties as well as electromigration (EM) in thin films. Silver may be a candidate for interconnect materials because of the low electric resistivity and an atomically sharp Ag/Si interface. Young's modulus EィイD2fィエD2 of silver films was measured as a function of film thickness, d, in the thickness range between 6 and 150 nm. EィイD2fィエD2 of silver films shows good agreement with the bulk value for films thicker than 50 nm and a decrease with decreasing film thickness below 50 nm, suggesting that the effective thickness of a grain boundary, tィイD2CBィエD2, is about 1.5 nm in a silver mono-metal film. In contrast, we also found that Ag/Pd multilayer films show the supermodulus effects at around the modulation wave length λ=1.9, 2.8 and 3.7 nm where the activation enthalpy for interdiffusion is anomalously high, suggesting that such Ag/Pd multilayer films may be potential materials for h … More eavy duty wiring. We also pursued the effect of alloy elements on the mechanical properties of Al-Si(Cu). Pure-Al and Al-Si(Cu) films prepared by the vacuum deposition show a decrease in Young's modulus for the film thickness below 10 nm and 20 nm, respectively, suggesting that tィイD2CBィエD2 is about 0.5 nm in pure-Al films and about 1 nm in Al-Si(Cu) films. In other words, the addition of Cu alloy element does not suppress the grain boundary diffusion in Al but work as an inhibitor to the self-diffusion of Al. It is also found that Al-Si(Cu) films prepared by RF-sputtering show the supermodulus effects for d below 20 nm where the interatomic spacing shows a decrease with decreasing d, suggesting that the dense grain boundary is mechanically strong. Matter of the fact, the study on the mechanical properties of nanocrystalline Au indicated that Young's modulus of the grain boundary in the dense nano-Au specimens is similar to the bulk value. On the other hand, the study on the collective motion in amorphous alloys suggests that in a nm-scale wiring, the collective motion of fine crystallites would be excited by the high-frequency EM-force. Less