CLARIFICATION AND SUPPRESSION OF ACCELERATED OXIDATION IN MoSi_2 AS A ULTRA-HIGH TEMPERATURE MATERIAL.
超高温材料 MoSi_2 加速氧化的澄清和抑制。
基本信息
- 批准号:09450263
- 负责人:
- 金额:$ 4.61万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1997
- 资助国家:日本
- 起止时间:1997 至 1998
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
MoSi_2 has been known for a promising material for ultra-high temperature applications. Although MoSi2 has outstanding oxidation resistance, it also shows accelerated oxidation behavior, resulting in pesting, especially at low temperatures. The accelerated oxidation and posting are based on simultaneous oxidation of Mo and Si. However, the mechanism of the simultaneous oxidation has not been clear. Aims of the present research are to clarify the mechanism and the method of the suppression. The main results are as follows.(1) The accelerated oxidation is most severe at temperatures ranging from 673 to 773 K and became much milder as temperature increases.(2) The accelerated oxidation and pesting are liable to occur under a combination of defects on surface of MoSi2 and H2O vapor in atmospheres.(3) As the atomic ratio of Mo/Si increases, the oxidation resistance decreases. However, the effect is appreciably small.(4) Defects such as pores and cracks are responsible for the accelerated oxidation and pesting. Conversely, the accelerated oxidation and pesting are completely suppressed by using fully dense MoSi2.(5) The initiation sites of the simultaneous oxidation are deffects.The accelerated oxidation and pesting, after all, are most strongly affected by preexisting defects located on the surface of MoSi2. Thermodynamical consideration also shows that the simultaneous oxidation is not an intrinsic property of MoSi2.
MoSi_2是一种很有前途的超高温材料。虽然MoSi 2具有出色的抗氧化性,但它也显示出加速的氧化行为,导致虫害,特别是在低温下。加速氧化和张贴是基于Mo和Si的同时氧化。然而,同时氧化的机制还不清楚。本研究的目的是阐明抑制的机制和方法。主要结果如下。(1)加速氧化是最严重的温度范围从673至773 K,并成为温和得多,随着温度的升高。(2)MoSi_2表面缺陷与水蒸气在大气中的共同作用下,易发生加速氧化和穿孔。(3)随着Mo/Si原子比的增加,抗氧化性降低。然而,影响是相当小的。(4)气孔和裂纹等缺陷是加速氧化和穿孔的原因。相反,通过使用完全致密的MoSi 2,完全抑制了加速的氧化和穿孔。(5)同时氧化的起始点是缺陷,而加速氧化和穿孔的影响最大的是位于MoSi 2表面的缺陷。热力学的考虑也表明,同时氧化是不是一个内在的属性的MoSi 2。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
K.Kurokawa: "High Temperature Oxidation of Refractory Metal Disilicides." J.of High Temp.Soc.24 (No.5). 161-166 (1998)
K.Kurokawa:“难熔金属二硅化物的高温氧化”。
- DOI:
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- 影响因子:0
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K.Kurokawa: "Low Temperature Oxidation of Fully Dense and Porous MoSi_2" Materials Sci.and Eng.A261. 292-299 (1999)
K.Kurokawa:“全致密多孔 MoSi_2 的低温氧化”材料科学与工程 A261。
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- 影响因子:0
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黒川一哉: "金属間化合物の耐酸化性" 材料と環境. 48・3(印刷中). (1999)
Kazuya Kurokawa:“金属间化合物的抗氧化性”材料与环境48・3(出版中)。
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K.Kurokawa: "In-Situ Synthesis of Fully Dense MoSi_2-SiC Composites by Spark Plasma Sintering." Proc.of International Sympo.on Applied Plasma Sci.129-134 (1997)
K.Kurokawa:“通过火花等离子烧结原位合成全致密 MoSi_2-SiC 复合材料。”
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- 影响因子:0
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K.Kurokawa: "In-Situ Synthesis of Fully Dense MoSi_2-SiC Composites by Spark Plasma Sintering" Proc.of inter'l Sympo.on Applied Plasma Sci.129-134 (1997)
K.Kurokawa:“通过火花等离子烧结原位合成全致密 MoSi_2-SiC 复合材料”Proc.of interl Sympo.on Applied Plasma Sci.129-134 (1997)
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KUROKAWA Kazuya其他文献
KUROKAWA Kazuya的其他文献
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{{ truncateString('KUROKAWA Kazuya', 18)}}的其他基金
Establishment of oxidation model of metal disilicides for ultra-high temperature application
超高温应用金属二硅化物氧化模型的建立
- 批准号:
13450289 - 财政年份:2001
- 资助金额:
$ 4.61万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
PREPARATION OF Mo-Si-C ULTRA-HIGH TEMPARATURE COMPOSITES.
Mo-Si-C超高温复合材料的制备。
- 批准号:
07555483 - 财政年份:1995
- 资助金额:
$ 4.61万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
PREPARATION AND HIGH TEMPERATURE OXIDATION BEHAVIOR OF MoSi_2-SiC COMPOSITES.
MoSi_2-SiC复合材料的制备及其高温氧化行为。
- 批准号:
06650789 - 财政年份:1994
- 资助金额:
$ 4.61万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)














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