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Study of temperature induced transition in small samples and small region in surface by using photoelectron spectromicroscopy and laser annealing systems

利用光电子能谱显微镜和激光退火系统研究小样品和表面小区域的温度诱导转变

基本信息

批准号：
09440125
负责人：
KINOSHITA Toyohiko
金额：
$ 7.04万
依托单位：
Institute for Solid State Physics, University of Tokyo Grant-in-Acd for Scientific Research (B) (1998-1999)Okazaki National Research Institutes (1997)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

项目摘要

By combining the photoelectron spectromicroscopy equipment and Nd YAG laser system, we have studied mainly the temperature dependent photoelectron spectra for a variety of materials. Because the leader of this project (Kinoshita) has moved from the institute for molecular science (IMS) to the Tsukuba branch of institute for solid state physics, Univ. Tokyo (ISSP) on November 1998, the study has been undergoing at both places. At IMS, we have also constructed the manipulator system for low temperature measurements. By using this combining system, we have been able to measure photoelectron spectra between 33K〜1500K The cleaning procedure of the sample surface has become easier very much. At IMS, the spatial resolution of 20μm for spectroscopic mode can be achieved. The photoelectron spectroscopy measurements for temperature induced mixed valence material EuNiィイD22ィエD2(SiィイD21-XィエD2GeィイD2XィエD2)ィイD22ィエD2 both at Eu 4d-4f and 3d-4f resonant conditions, very small organic materials such, as DCNQI or DSTSA samples and so on have been performed. The Si 2p photoelectron spectra for high-temperature phase Si(111)1xl were also measured. We are also studying surface photo-voltage effect induced by laser irradiation onto semiconductor surface. At ISSP, we are constructing higher performance photoelectron spectromicroscopy equipment by which the lateral resolution of 60nm for imaging mode can be expected. Although data have not. been obtained yet, we started to construct the combining system with laser annealing system and microscopy system.

利用光电子能谱显微镜和Nd：YAG激光系统相结合的方法，主要研究了多种材料的光电子能谱随温度的变化。由于该项目的负责人（木下）于1998年11月从分子科学研究所（IMS）转到东京大学固体物理研究所（ISSP）筑波分支，因此该研究一直在两地进行。在IMS，我们还构建了用于低温测量的机械手系统。利用该组合系统，我们已能在33 K ~ 1500 K范围内测量光电子能谱。在IMS上，光谱模式的空间分辨率可以达到20μm。本文对混合价态材料EuNi_（22）Eu_（21-X）D_2Ge_（22-x）D_2Ge_（21-x）D_2Ge_（22-x）D_2Ge_（21-测量了高温相Si（111）1xl的2 p光电子能谱。我们还研究了激光照射半导体表面所引起的表面光电压效应。在ISSP，我们正在构建更高性能的光电子能谱显微镜设备，通过该设备，成像模式的横向分辨率可达到60 nm。虽然数据没有。在获得了这些结果之后，我们开始构建激光退火系统和显微镜系统的结合系统。