Study of temperature induced transition in small samples and small region in surface by using photoelectron spectromicroscopy and laser annealing systems

由光电子光谱显微镜设备和Nd YAG激光系统组合，我们主要研究了温度相关的光电子光谱，用于各种材料。因为这个项目的领导者（Kinoshita）从分子科学研究所（IMS）转移到了Tsukuba分支（固态物理学研究所），东京大学（ISSP），1998年11月，该研究被低估在两个地方。在IMS，我们还构建了一个用于低温测量的操纵器系统。由于使用这个组合系统，我们可以测量33 K到1500 K之间的光电子规格，因此样品表面的清洁程序变得非常容易。在IMS中，20微米的空间分辨率可以实现，光谱模式可以实现。The photoelectron spectroscopy measurements for temperature induced mixed valence material EuNi ― D22 ― D2（Si ― D2 Ge ― D2 X ― D2）― D22 ― D2 both at Eu 4d-4f and 3d ― 4f resonant conditions，非常小的有机材料such， as DCNQI or DSTSA samples，因此已被执行。用于高温相位Si（111）的Si 2 p光电子光谱仪也是可测量的。我们也在研究表面的光电压效应，由半导体表面上的激光辐射引起。At ISSP， we are constructing higher performance photoelectron spectromicroscopy equipment by which the lateral resolution of 60 nm for imaging mode can be expected。其他数据也没有。然而，我们已经开始构建一个带有激光退火系统和显微镜系统的组合系统。

By combining the photoelectron spectromicroscopy equipment and Nd YAG laser system, we have studied mainly the temperature dependent photoelectron spectra for a variety of materials. Because the leader of this project (Kinoshita) has moved from the institute for molecular science (IMS) to the Tsukuba branch of institute for solid state physics, Univ. Tokyo (ISSP) on November 1998, the study has been undergoing at both places. At IMS, we have also constructed the manipulator system for low temperature measurements. By using this combining system, we have been able to measure photoelectron spectra between 33K〜1500K The cleaning procedure of the sample surface has become easier very much. At IMS, the spatial resolution of 20μm for spectroscopic mode can be achieved. The photoelectron spectroscopy measurements for temperature induced mixed valence material EuNiィイD22ィエD2(SiィイD21-XィエD2GeィイD2XィエD2)ィイD22ィエD2 both at Eu 4d-4f and 3d-4f resonant conditions, very small organic materials such, as DCNQI or DSTSA samples and so on have been performed. The Si 2p photoelectron spectra for high-temperature phase Si(111)1xl were also measured. We are also studying surface photo-voltage effect induced by laser irradiation onto semiconductor surface. At ISSP, we are constructing higher performance photoelectron spectromicroscopy equipment by which the lateral resolution of 60nm for imaging mode can be expected. Although data have not. been obtained yet, we started to construct the combining system with laser annealing system and microscopy system.