Study of temperature induced transition in small samples and small region in surface by using photoelectron spectromicroscopy and laser annealing systems

By combining the photoelectron spectromicroscopy equipment and Nd YAG laser system我们已经studied mainly the temperature dependent photoelectron spectra for a variety of materials.Because the leader of this project (Kinoshita) has moved from the institute for molecular science（IMS） to Tsukuba branch of institute for solid state physicsUniv. Tokyo (ISSP) on November 1998, the study has been undergoing at both places. at IMS我们已经建立了一个manipulator system for low temperature measurements. By using thiscombining system,we have been able to measure photoelectron spectra between 33k - 1500k The清洁程序sample surface has become easier very much. At IMSthe spatial resolution of 20μm for spectroscopic mode can be achieved. the photoelectronspectroscopy measurements for temperature induced mixed valence materialEuNi - D22 - D2(Si - D21-X - 2ge - D2X - D2) - D22 - D2 both at Eu 4d-4f and 3d-4f resonant conditions非常小的有机材料such，如DCNQI或DSTSA samples，并已在之前表现。The Si 2p photoelectron spectrahigh-temperature phase Si(111)1xl were also measured. We are also studying surface photo-voltageeffect induced by laser irradiation onto semiconductor surface. At ISSP，we are constructing高性能photoelectron spectromicroscopy equipment by which thelateral resolution of 60nm for imaging mode can be expected, Although data not. been obtainedyet，我们开始构建与laser annealing system with laser annealing system and microscopy system的combining system。

By combining the photoelectron spectromicroscopy equipment and Nd YAG laser system, we have studied mainly the temperature dependent photoelectron spectra for a variety of materials. Because the leader of this project (Kinoshita) has moved from the institute for molecular science (IMS) to the Tsukuba branch of institute for solid state physics, Univ. Tokyo (ISSP) on November 1998, the study has been undergoing at both places. At IMS, we have also constructed the manipulator system for low temperature measurements. By using this combining system, we have been able to measure photoelectron spectra between 33K〜1500K The cleaning procedure of the sample surface has become easier very much. At IMS, the spatial resolution of 20μm for spectroscopic mode can be achieved. The photoelectron spectroscopy measurements for temperature induced mixed valence material EuNiィイD22ィエD2(SiィイD21-XィエD2GeィイD2XィエD2)ィイD22ィエD2 both at Eu 4d-4f and 3d-4f resonant conditions, very small organic materials such, as DCNQI or DSTSA samples and so on have been performed. The Si 2p photoelectron spectra for high-temperature phase Si(111)1xl were also measured. We are also studying surface photo-voltage effect induced by laser irradiation onto semiconductor surface. At ISSP, we are constructing higher performance photoelectron spectromicroscopy equipment by which the lateral resolution of 60nm for imaging mode can be expected. Although data have not. been obtained yet, we started to construct the combining system with laser annealing system and microscopy system.