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Study of the interfaces between magnetic thin films and antiferromagnetic substrates by synchrotron radiation photoelectron emission microscopy

同步辐射光电子发射显微镜研究磁性薄膜与反铁磁基底之间的界面

基本信息

批准号：
15360017
负责人：
KINOSHITA Toyohiko
金额：
$ 7.17万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

项目摘要

Photoemission Electron Microscope (PEEM) equipment operated at our laboratory in the Photon Factory beamline, Tsukuba, is used for the magnetic domain imaging. Combining the merits with the circular and linear magnetic dichroism effects and tunability of the photon energy, we can obtain the element specific domain images both for ferro-and antiferromagnetic materials. This advantage allows us to get the information not only for thin films but also for substrates and interfaces. However, in order to use this advantage completely, samples should be rotated freely and precisely in plane and for a variety of temperature. We designed a new sample manipulator for this purpose.During the period of this project, we mainly perform the experiments at the beamline BL11A, 13C and 2C of the Photon Factory. The substrate was NiO(100). Cr or Fe thin film was deposited onto the substarate. For the Cr/NiO(100) system, we found the modulation contrast of the NiO antifferomagnetic domain as a function of … More Cr thickness. This may originates from the exchange coupling between the Cr and Ni magnetic moments. In odd monolayer thickness regions of Cr, the NiO magnetic domain contrast decreases whereas the contrast remains in even layer regions. It is supposed that the net magnetization exists in odd layer Cr region and no magnetization in even layer regions. Therefore, only at the odd layer region, the contrast may be suppressed. For Fe?NiO(100) system, we found out very complicated domain structures in Fe thin film as a function of the thickness. This also originates from the exchange coupling between the film and the substrate, but further, we should consider the domain structures caused by the anisotropy energy of film itself. We further found out the T-donain (originating from twin structure due to antiferromagnetic crystal distortion) is not affected by the film deposition whereas the S-domain (originating from spin structure) is strongly affected. This phenomenon is distinguished by the comparative observation of domains at Ni-L edge and O-K edge.We also perform the experiment at the beamlines at SPring-8 (BL-23 SU, 25SU and 27SU), where the higher performance PEEMs are installed than at the PF. We clearly distinguished the T-and S-domains of NiO. We further succeeded to observe detailed X-ray absorption spectra with richer features than those reported previously. This success was done by the microscopic measurements from the non-damaged surface area of NiO. Less

在我们的实验室在光子工厂束线，筑波，光电子显微镜（PEEM）设备，用于磁畴成像。结合圆磁二向色性和线磁二向色性以及光子能量的可调谐性，我们可以获得铁磁和反铁磁材料的元素特定畴图像。这一优势使我们不仅可以获得薄膜的信息，还可以获得衬底和界面的信息。然而，为了充分利用这一优势，样品应在平面内自由精确地旋转，并适用于各种温度。在本项目期间，我们主要在光子工厂的BL 11 A、13 C和2C光束线上进行实验。基底是NiO（100）。在衬底上沉积Cr或Fe薄膜。对于Cr/NiO（100）系统，我们发现NiO反铁磁畴的调制对比度是 ...更多信息 Cr厚度。这可能源于Cr和Ni磁矩之间的交换耦合。在奇数单层厚度区域的Cr，NiO磁畴对比度降低，而对比度保持在偶数层区域。假设奇数层Cr区存在净磁化，偶数层Cr区无磁化。因此，仅在奇数层区域处，可以抑制对比度。为了菲？NiO（100）体系中，我们发现Fe薄膜中的畴结构随厚度的变化非常复杂。这也源于薄膜与衬底之间的交换耦合，但更进一步，我们应该考虑由薄膜本身的各向异性能引起的畴结构。我们进一步发现，T-畴（源于反铁磁晶体扭曲的孪晶结构）不受薄膜沉积的影响，而S-畴（源于自旋结构）受到强烈影响。我们还在SPring-8（BL-23 SU，25 SU和27 SU）的光束线上进行了实验，在那里安装了比PF更高性能的PEEM，我们清楚地区分了NiO的T和S畴。我们进一步成功地观察到详细的X射线吸收光谱，具有比以前报道的更丰富的功能。这一成功是通过从NiO的未损坏的表面区域的显微镜测量完成的。少