Layr Rotation Dynamics and Its Functional Application in Ferroelectric and Antiferroelectric Liquid Crystal Devices
Layr Rotation Dynamics and Its Functional Application in Ferroelectric and Antiferroelectric Liquid Crystal Devices
批准号:
09450143
负责人:
OZAKI Masanori
金额:
$8.13万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998
中文摘要
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英文摘要
The smectic layer rotation in ferroelectric and antiferroelectric liquid crystals has been studied using a variety of materials, cell configurations and waveforms of driving voltage. The smectic layer uniformly rotates upon the application of ac electric field having an asymmetric component of the waveform. In the system including electrical impurity, the layer rotates even by applying dc voltage, which is associated with the electrohydrodynamic effect. From the total reflection ellipsometry measurement, it has been found that the layers in the vicinity of the cell surfaces rotate in the same manner as that in bulk.The characteristic domain formation has been observed in a smectic liquid crystal having direct phase transition from the nematic to the smectic C phases, which has long rectangular domains parallel to the rubbing axis. Using this material, periodical domain structure has been fabricated. Reversible optical recording by the irradiation of laser light has also been realized using ferroelectric liquid crystal with N^*-SmC^* phase sequence.Photo-induced layer switching has been realized in the system of azo-dye doped ferroelectric liquid crystal having N^*-SmC^* phase sequence. Upon the irradiation of the UV light, photoisomerization of azo-dye in the liquid crystal takes place and the phase changes into the N^* phase, and upon the sequential irradiation of the green light, the phase of the liquid crystal go back to the SmC^* phase. Upon the simultaneous application of the electric field during this sequential irradiation of the light, the direction of the layer alignment is switched to the opposite direction.
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K.Nakayama: "Influence of Smectic Layer Structure on Electric Field-Induced Migration of SiO_2 Particles" Mol.Cryst.Liq.Cryst.(印刷中). (1999)
K. Nakayama:“近晶层结构对 SiO_2 粒子电场诱导迁移的影响”Mol.Cryst.Liq.Cryst.(出版中)。
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K.Nakayama: "Dynamics of Smectic Layer Alignment in Ferroelectric and Antiferroelectric Liquid Crystals." Ferroeletcrics. 212. 195-202 (1998)
K.Nakayama:“铁电和反铁电液晶中近晶层排列的动力学。”
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K.Nakayama: "Erasable Patterning in Ferroelectric Liquid Crystal with N^*-SmC^* Phase Sequence by Optical Heating" Mol.Cryst.Liq.Cryst.(in press).
K.Nakayama:“通过光学加热在铁电液晶中使用 N^*-SmC^* 相序列进行可擦除图案”Mol.Cryst.Liq.Cryst.(正在印刷中)。
DOI:
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发表时间:
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影响因子:
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作者:
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通讯作者:
K.Nakayama: "Dynamics of Smectic Layer Alignment in Ferroelectric and Antiferroelectric Liquid Crystals" Ferroelectrics. 212. 195-202 (1998)
K.Nakayama:“铁电和反铁电液晶中近晶层排列的动力学”铁电体。
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
K.Nakayama: "Erasable Patterning in Ferroelectric Liquid Crystal with N^*-SmC^* Phase Sequence by Optical Heating" Mol.Cryst.Liq.Cryst.(印刷中). (1999)
K. Nakayama:“通过光学加热实现 N^*-SmC^* 相序列的铁电液晶可擦除图案”Mol.Cryst.Liq.Cryst.(出版中)。
DOI:
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发表时间:
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影响因子:
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作者:
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通讯作者:
共 13 条
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