MICROSTRUCTURAL CONTROL OF THE INTERFACE FOR SPIN-VALVE GMR THIN-FILMS BY APPLYING THE ULTRA CLEAN SPUTTERING PROCESS

“超清洁分离过程”（XC过程）最近在其制造中引入了超瘦自旋阀，以控制微观结构，并建立卓越的磁性性能。电影沉积过程中的清洁性和自旋阀元素的磁性属性在与其微结构的连接中被讨论。Sub./ Ta/Ni-Fe/Mn-Ni/Ni-Fe和Sub./ Ta/Ni-Fe/Mn-Ir/Ta quadrilayers在不同的纯度下制造。在房间温度下测量的不同异构体强度在很薄的F/AF bilayer下制造，与较低等级（LG-）过程下制造的bilayer进行比较，只有在sputtering chamber的基本压力下有所不同： 10 -7 bilayer D1 Torr order。从结构分析和对比勒人、比勒人中的谷物的交换变化的温度依赖性，在XC-process中发现了被放大的过程 ... More 或者，由于对不同形态的交换的增强，由于对抗磁颗粒的增强，导致了抑制热干扰和降低局部阻塞温度。对于电子运输来说，对谷物观察在XC处理的电影中也扮演了一个重要的角色。《薄膜中谷物边界和缺陷的退化，减少了自旋阀门子的饱和抵抗力的饱和度。Ta/Ni-Fe/Co/Cu/Co/Mn-Ir/Ta，降低了粒子大气层中的不安全性水平，并导致了MR比率的增加。在XC-过程中，最优化的自旋阀的MR比率达到9.7%，甚至在148 [encircledA]的总厚度下，除了大写的Ta层之外，当LG-处理的自旋阀下降到0.9%的情况下，由于交换各异性行为的消失。我们结合了一个非常干净的分散过程，可以真正地提高超瘦自旋阀门，并使它们远离的振荡接口，这对诱导等价磁性属性的重要性。Less（低）

The extremely clean sputtering process (XC process) was newly introduced in the fabrication of ultra-thin spin valves to control the microstructure and to establish the excellent magnetic properties. The relation between cleanness during film deposition process and the magnetic properties of spin valve elements has been discussed in connection with their microstructure. Sub./Ta/Ni-Fe/Mn-Ni/Ni-Fe and Sub./Ta/Ni-Fe/Mn-Ir/Ta quadrilayers were fabricated under the different purity of the sputtering atmospheres. Strength of the exchange anisotropy measured at room temperature was enhanced in very thin F/AF bilayer fabricated under the XC-process, comparing with the bilayer fabricated under a lower graded (LG-) process, which only differed in the base pressure of the sputtering chamber : 10ィイD1-7ィエD1 Torr order. From a structural analysis and a temperature dependence of the exchange anisotropy of the bilayers, grains in the bilayers fabricated under the XC-process were found to be enlarged a … More nd that the enhancement of exchange anisotropy was caused by the enlargement of antiferromagnetic grains, which suppress thermal agitation and lowering the local blocking temperature. For the electron transport, the enlargement of the grains observed in the XC-processed films also played an important role. The decrease of grain boundaries and impurities in the films, reduced saturated resistivity of the spin valves, Sub. Ta/Ni-Fe/Co/Cu/Co/Mn-Ir/Ta, with lowering the impurity level in the sputtering atmosphere and resulted in the increase of the MR ratios. The MR ratio of tan optimized spin valve fabricated under the XC-process achieved to 9.7%, even in the total thickness of 148 【encircledA】 except for the capping Ta layer, while that of the LG-processed spin valve dropped to 0.9% due to the vanish of the exchange anisotropy. We concluded that the extremely clean sputtering process is greatly effective to realize ultra-thin spin valves and that to avoid rumpling interfaces of them it important to induce the adequate magnetic properties. Less