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MICROSTRUCTURAL CONTROL OF THE INTERFACE FOR SPIN-VALVE GMR THIN-FILMS BY APPLYING THE ULTRA CLEAN SPUTTERING PROCESS

超洁净溅射工艺对自旋阀巨磁阻薄膜界面微观结构的控制

基本信息

批准号：
09355010
负责人：
TAKAHASHI Migaku
金额：
$ 19.2万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09355010/
关键词：
THIN FILMS MAGNETIC THINI FILMS ULTRA HIGH VACUUM SPUTTERING 極薄膜

项目摘要

The extremely clean sputtering process (XC process) was newly introduced in the fabrication of ultra-thin spin valves to control the microstructure and to establish the excellent magnetic properties. The relation between cleanness during film deposition process and the magnetic properties of spin valve elements has been discussed in connection with their microstructure. Sub./Ta/Ni-Fe/Mn-Ni/Ni-Fe and Sub./Ta/Ni-Fe/Mn-Ir/Ta quadrilayers were fabricated under the different purity of the sputtering atmospheres. Strength of the exchange anisotropy measured at room temperature was enhanced in very thin F/AF bilayer fabricated under the XC-process, comparing with the bilayer fabricated under a lower graded (LG-) process, which only differed in the base pressure of the sputtering chamber : 10ィイD1-7ィエD1 Torr order. From a structural analysis and a temperature dependence of the exchange anisotropy of the bilayers, grains in the bilayers fabricated under the XC-process were found to be enlarged a … More nd that the enhancement of exchange anisotropy was caused by the enlargement of antiferromagnetic grains, which suppress thermal agitation and lowering the local blocking temperature. For the electron transport, the enlargement of the grains observed in the XC-processed films also played an important role. The decrease of grain boundaries and impurities in the films, reduced saturated resistivity of the spin valves, Sub. Ta/Ni-Fe/Co/Cu/Co/Mn-Ir/Ta, with lowering the impurity level in the sputtering atmosphere and resulted in the increase of the MR ratios. The MR ratio of tan optimized spin valve fabricated under the XC-process achieved to 9.7%, even in the total thickness of 148 【encircledA】 except for the capping Ta layer, while that of the LG-processed spin valve dropped to 0.9% due to the vanish of the exchange anisotropy. We concluded that the extremely clean sputtering process is greatly effective to realize ultra-thin spin valves and that to avoid rumpling interfaces of them it important to induce the adequate magnetic properties. Less

在超薄自旋阀的制备中引入了极洁净溅射工艺（XC工艺），以控制微结构并获得优异的磁性能。本文结合自旋阀元件的微结构，讨论了薄膜沉积过程中的清洁度与磁性能的关系。子公司/ Ta/Ni-Fe/Mn-Ni/Ni-Fe及Sub./在不同的溅射气氛下制备了Ta/Ni-Fe/Mn-Ir/Ta四层薄膜。在室温下测量的交换各向异性的强度增强在非常薄的F/AF双层下的XC-过程中制造的，与下一个较低的梯度（LG-）的过程中制造的双层相比，这只是在溅射室的基础压力不同：10毫米汞柱D1-7毫米汞柱D1托的顺序。从结构分析和交换各向异性的双层膜的温度依赖性，在XC工艺下制造的双层膜中的晶粒被放大， ...更多信息交换各向异性的增强是由于反铁磁晶粒的长大抑制了热扰动，降低了局部阻塞温度。对于电子传输，在XC处理的薄膜中观察到的晶粒的扩大也发挥了重要作用。薄膜中晶界和杂质的减少，自旋阀饱和电阻率的降低，Sub。Ta/Ni-Fe/Co/Cu/Co/Mn-Ir/Ta，降低了溅射气氛中的杂质含量，提高了MR比。在XC工艺下制造的tan优化的自旋阀的MR比达到9.7%，即使在除了帽Ta层之外的148 [encircledA]的总厚度中，而LG工艺的自旋阀的MR比由于交换各向异性的消失而下降到0.9%。我们的结论是，非常干净的溅射工艺是非常有效的实现超薄自旋阀，以避免褶皱的界面，它们是重要的是诱导足够的磁性。少