Energy-efficient Third Generation Bipolar Technology (ENERGY-3GBT)

ENERGY-3GBT将使英国成为下一代功率晶体管生产的中心，确保英国工业不受全球功率半导体供应链瓶颈的阻碍，并能够引领世界提高能源效率，实现净零。ENERGY-3GBT将开发，优化和示范英国低成本中试规模生产效率达99%的硅基第三代双极晶体管（3GBT）在要求10- 100 A、= 1700 V的应用中，ENERGY-3GBT最初的目标是通过项目合作伙伴西门子英国公司在工业变频驱动器（VFD）中取代IGBT。目标次级应用包括风力涡轮机功率转换器、下一代电动汽车、铁路电气化、5G等。在英国的工业驱动中采用99%效率的3GBT（约占制造业交付能源使用的一半），可为用户节省2.284亿英镑/年的电力成本，并减少440 ktCO 2 e/年的温室气体排放。最终，在工业驱动器、可再生能源电力转换器、电动汽车、铁路、5G和更多高功率产品中替代IGBT，有可能为英国的净零目标做出重大贡献。

ENERGY-3GBT will place the UK at the centre of next-generation power transistor production, ensuring UK industry is not impeded by global power semiconductor supply chain bottlenecks and can lead the world in improving energy-efficiency in the drive to net-zero.ENERGY-3GBT will develop, optimise and demonstrate low-cost UK-based pilot-scale manufacture of 99% efficient silicon-based third-generation bipolar transistors (3GBTs) that outperform 95%-efficient Insulated Gate Bipolar Transistors (IGBTs) and best-in-class 99% efficient Gallium Nitride (GaN) and Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETS) in applications requiring 10-100A, =1700V, =50 kHz switching speeds.ENERGY-3GBT initially targets replacement of IGBTs in industrial variable frequency drives (VFDs) through project partner Siemens UK. Secondary applications targeted include wind turbine power-converters, next-generation electric vehicles, rail electrification, 5G and more.Adoption of the 99% efficient 3GBT in industrial drives in the UK (accounting for about half of the manufacturing sector's delivered energy use) could save users £228.4m/year in reduced electricity costs and reduce greenhouse emissions by 440ktCO2e/year. Ultimately, replacement of IGBTs in industrial drives, renewable energy power converters, electric vehicles, rail, 5G and many more high-power products has potential to make a significant contribution to the UK's net zero ambitions.