Energy-efficient Third Generation Bipolar Technology (ENERGY-3GBT)

ENERGY-3GBT将使英国成为下一代功率晶体管生产的中心，确保英国工业不受全球功率半导体供应链瓶颈的阻碍，并在提高能源效率方面引领世界走向净零排放。能源- 3gbt将开发、优化和展示低成本的英国中试规模生产的99%效率的硅基第三代双极晶体管（3GBTs），在需要10-100A， =1700V, =50 kHz开关速度的应用中，其性能优于95%效率的绝缘栅双极晶体管（igbt）和同类最佳的99%效率氮化镓（GaN）和碳化硅（SiC）金属氧化物半导体场效应晶体管（mosfet）。ENERGY-3GBT最初的目标是通过项目合作伙伴西门子英国公司取代工业变频驱动器（vfd）中的igbt。二级应用目标包括风力涡轮机电源转换器、下一代电动汽车、铁路电气化、5G等。在英国的工业驱动器中采用99%高效的3GBT（约占制造业交付能源使用的一半）可以为用户节省2.284亿英镑/年的电力成本，并减少温室气体排放440万吨二氧化碳当量/年。最终，在工业驱动器、可再生能源电源转换器、电动汽车、铁路、5G和更多大功率产品中替换igbt有可能为英国的净零目标做出重大贡献。

ENERGY-3GBT will place the UK at the centre of next-generation power transistor production, ensuring UK industry is not impeded by global power semiconductor supply chain bottlenecks and can lead the world in improving energy-efficiency in the drive to net-zero.ENERGY-3GBT will develop, optimise and demonstrate low-cost UK-based pilot-scale manufacture of 99% efficient silicon-based third-generation bipolar transistors (3GBTs) that outperform 95%-efficient Insulated Gate Bipolar Transistors (IGBTs) and best-in-class 99% efficient Gallium Nitride (GaN) and Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETS) in applications requiring 10-100A, =1700V, =50 kHz switching speeds.ENERGY-3GBT initially targets replacement of IGBTs in industrial variable frequency drives (VFDs) through project partner Siemens UK. Secondary applications targeted include wind turbine power-converters, next-generation electric vehicles, rail electrification, 5G and more.Adoption of the 99% efficient 3GBT in industrial drives in the UK (accounting for about half of the manufacturing sector's delivered energy use) could save users £228.4m/year in reduced electricity costs and reduce greenhouse emissions by 440ktCO2e/year. Ultimately, replacement of IGBTs in industrial drives, renewable energy power converters, electric vehicles, rail, 5G and many more high-power products has potential to make a significant contribution to the UK's net zero ambitions.